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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of semiconductor device electrical characteristic degradation and failure

Active Publication Date: 2016-11-16
SICHUAN HONGXINWEI TECH
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Problems solved by technology

The result of contamination is: under BT-stress conditions, such as high temperature and strong electric field caused by reverse bias, sodium ions eventually accumulate near the reverse bias electrode region of the semiconductor device, forming a conductive channel on the surface of the device, This will lead to the degradation of the electrical characteristics of semiconductor devices, and even permanent failure

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0016] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0017] A semiconductor device using a glass passivation layer based on aluminosilicate, such as lead oxide (PbO) or (ZnO) zinc oxide aluminosilicate. In order to increase the reliability of the semiconductor device under reverse bias and high temperature thermal stress, the aluminosilicate glass passivation layer contains cesium at a concentration of 20ppm (mol, mole percent) to 200ppm (mol, mole percent).

[0018] The results of XPS (X-ray photoelectron spectroscopy, X-ray photoelectron spectroscopy) technology measurement show that the concentration of cesium on the surface of the glass passivation layer is consistent with the setting of the present invention, specifically 5*10 18 cm -3 . We compare the resistivity of the glass passivation layer (measured using ASTM D-257) to 2*10 11 Ω·cm - 3*10 11 The range of Ω·cm has been increased to 1.5*10 ...

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Abstract

The invention provides a semiconductor device, and particularly relates to an aluminum silicate glass-passivated semiconductor device. For example, a lead or zinc oxide and aluminum oxide aluminum silicate glass layer is suitable for high-voltage application. In order to increase the reliability of the semiconductor device under reverse bias and high stress, an aluminum silicate glass-passivated layer often contains caesium of which the concentration is 20ppm (mol, mole percent) to 200ppm (mol, mole percent).

Description

technical field [0001] The invention is generally applied to semiconductor devices, especially semiconductor devices passivated with aluminosilicate glass, such as lead oxide (PbO) or zinc oxide (ZnO) aluminosilicate, metal oxide glass protective layer, suitable for high voltage applications . More specifically, it concerns high-reliability devices, especially under reverse bias and high-temperature stress. Background technique [0002] As we all know, due to the high sensitivity of semiconductor device parameters to surface impurity contamination and the accumulation of mobile charges near the PN junction, in high-demand application environments, the surface passivation technology of semiconductor devices is one of the main means to obtain high reliability. . Among various passivation designs and methods, the known prior art, glass passivation technology, such as US Patent 3212921, October 19, 1965, has provided semiconductor devices with good chemical, mechanical and ele...

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Application Information

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IPC IPC(8): H01L23/29H01L21/02
CPCH01L23/291H01L21/02178H01L21/02194
Inventor 李学良西里奥·艾·珀里亚科夫
Owner SICHUAN HONGXINWEI TECH
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