Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mode-locked laser for outputting femtosecond pulse

A mode-locked laser, femtosecond pulse technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of pulse splitting, femtosecond pulse difficulty, etc., to improve stability, reduce power consumption and process complexity, Ease of mass production

Inactive Publication Date: 2016-10-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional semiconductor mode-locked lasers are limited by the gain-narrowing effect caused by mode competition and the effects of self-phase modulation and gain dispersion in the gain region. It is difficult to achieve femtosecond pulses and prone to pulse splitting.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mode-locked laser for outputting femtosecond pulse
  • Mode-locked laser for outputting femtosecond pulse
  • Mode-locked laser for outputting femtosecond pulse

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] see figure 1 , 2 , The embodiment shown in 3,4. The embodiment of the present invention proposes a design scheme of an InP-based monolithic integrated semiconductor femtosecond pulse mode-locked laser that works near the communication wavelength of 1550nm and whose pulse output is expected to be about 300fs, including a semiconductor saturable absorber 1, a semiconductor optical amplifier 2, 1×32 channel arrayed waveguide grating 3 and phase modulation delay line 4. They are all integrated on the same InP substrate by standard semiconductor active / passive docking process.

[0029] The semiconductor saturable absorber 1 in this embodiment has the same material and epitaxial structure as the semiconductor optical ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a mode-locked laser for outputting a femtosecond pulse. The mode-locked laser includes a semiconductor saturable absorber, a semiconductor light amplifier, a multi-channel array waveguide grate and a phase delay waveguide array that are sequentially connected through a passive ridge waveguide between two cleavage planes. The mode-locked laser can output the femtosecond pulse without using an external pulse compression technology, and has the advantages of simple manufacture process, compact structure, low cost, and mass production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to an active-passive monolithic integrated semiconductor mode-locked laser that can realize femtosecond pulse output. Background technique [0002] Femtosecond optical pulses have been produced since the end of the 20th century due to their extremely short pulse width (duration within 10 -15 s level), high peak power and wide spectrum coverage and other excellent features have been developed rapidly. For example, in basic disciplines such as physics, chemistry and other microscopic ultrafast fields, because the change of its motion state usually occurs on the femtosecond scale, the usual macroscopic measurement methods cannot be used for normal test and analysis. However, the advantage of the extremely short pulse width of femtosecond lasers has changed this situation, and a large number of experimental work has been completed in related fields suc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/065
CPCH01S5/0657
Inventor 刘松涛张瑞康陆丹吉晨
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com