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Heat sink material for semiconductors

A heat sink material and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as insufficient bonding between the wrapping layer and the substrate, poor mechanical properties, poor insulation, and affecting thermal conductivity. , to achieve the effect of good mechanical properties, excellent insulation and low thermal conductivity

Inactive Publication Date: 2016-10-26
黄宇
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a heat sink material for semiconductors to solve the problems of existing heat sink materials for semiconductors, such as poor mechanical properties, poor insulation, low thermal conductivity, large expansion coefficient, insufficient bonding between the wrapping layer and the substrate, and affecting thermal conductivity.

Method used

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preparation example Construction

[0070] The preparation method of the semiconductor heat sink material comprises the following steps:

[0071] S1: the preparation of the matrix, including the following steps:

[0072] S11: Dissolving sodium carbonate and zirconium dioxide sol in water 6-8 times the total mass fraction, then putting in cellulose, soaking for 6-7 hours, and drying at 68-72°C until the water content is ≤8%. To obtain mixture I, mix and grind mixture I and dimethyl itaconate for 3-6 hours to obtain mixture II;

[0073] S12: Add graphite, aluminum oxide, aluminum nitride, silicon nitride, carbon nanotubes, silicon dioxide, kaolin, magnesium oxide, light calcium, binder, coupling agent, compatibilizer, antioxidant, Stabilizer, bridging agent, regulator, strengthening agent, coagulant, toughening agent, stabilizer, terminator, 300-500 parts of water, microwave power 100-300W, temperature 650-700°C, speed 100 Stirring at -400r / min for 3-6h, and then drying the resultant to a water content of ≤8%, t...

Embodiment 1

[0088] A heat sink material for semiconductors, made of the following raw materials in units of weight: 220 parts of a base, 12 parts of a wrapping layer;

[0089] The matrix is ​​made of the following raw materials in units of weight: 65 parts of graphite, 8 parts of aluminum oxide, 10 parts of aluminum nitride, 12 parts of silicon nitride, 6 parts of carbon nanotubes, 8 parts of silicon dioxide, 3 parts of kaolin, 1.5 parts of magnesium oxide, 2.5 parts of sodium carbonate, 5 parts of zirconia sol, 4 parts of light calcium, 12 parts of cellulose, 4 parts of dimethyl itaconate, 9 parts of binder, coupling agent 1.5 parts, compatibilizer 1.5 parts, antioxidant 1.2 parts, stabilizer 1.2 parts, bridging agent 0.9 parts, regulator 0.7 parts, strengthening agent 0.5 parts, coagulant 0.5 parts, toughening agent 0.3 parts, stabilizer 0.3 parts part, 0.2 part of terminator;

[0090] The coupling agent is an epoxy silane coupling agent;

[0091] Described compatibilizer is maleic an...

Embodiment 2

[0126] A heat sink material for semiconductors, made of the following raw materials in units of weight: 150 parts of a substrate, 8 parts of a wrapping layer;

[0127] The matrix is ​​made of the following raw materials in units of weight: 50 parts of graphite, 6 parts of aluminum oxide, 8 parts of aluminum nitride, 10 parts of silicon nitride, 4 parts of carbon nanotubes, 5 parts of silicon dioxide, 2 parts of kaolin, 1 part of magnesium oxide, 2 parts of sodium carbonate, 4 parts of zirconia sol, 3 parts of light calcium, 9 parts of cellulose, 3 parts of dimethyl itaconate, 5 parts of binder, coupling agent 1 part, compatibilizer 1 part, antioxidant 0.8 part, stabilizer 0.8 part, bridging agent 0.6 part, regulator 0.5 part, strengthening agent 0.4 part, coagulant 0.4 part, toughening agent 0.2 part, stabilizer 0.2 part part, 0.1 part of terminator;

[0128] The coupling agent is an epoxy silane coupling agent;

[0129] Described compatibilizer is maleic anhydride graft com...

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Abstract

The invention discloses a heat sink material for semiconductors, which comprises a substrate and a wrapping layer. The substrate is made of the following raw materials: graphite, aluminum oxide, aluminum nitride, silicon nitride, a nanometer carbon tube, silicon dioxide, kaolin, magnesium oxide, sodium carbonate, zirconium dioxide, light calcium, cellulose, dimethyl itaconate, binders, coupling agents, compatibilizers, anti-oxidants, tranquilizers, bridging agents, conditioning agents, reinforcing agents, coagulants, toughening agents, stabilizers, and terminating agents. The wrapping layer is made of the following raw materials: silicon carbide fiber, graphite, silicon dioxide, silicon nitride, sodium metasilicate, sodium cellulose glycolate, initiators, crosslinking agents, softening agents, adhesion agents, catalysts, and fire retardants. The heat sink material of the invention has good mechanical properties, excellent insulation, thermal conductivity and low expansion coefficient, and can be widely applied to heat sink material for LED heat guiding and radiating in semiconductor technology.

Description

【Technical field】 [0001] The invention belongs to the technical field of electronic components and the technical field of heat sink material preparation, and in particular relates to a heat sink material for semiconductors. 【Background technique】 [0002] With the continuous improvement of semiconductor technology and manufacturing process, the luminous flux and luminous efficiency of LED have been continuously improved, and power LEDs have been widely used in daily life and industrial production. However, for high-power LEDs, the power density of the chip is high, and the large heat generation undoubtedly puts forward higher requirements for its heat dissipation materials. [0003] For the heat dissipation of traditional LED chips, a substrate (ie heat sink material) is provided under the LED chip, and the bottom of the substrate is connected to the heat sink. The heat of the LED chip is conducted to the heat sink through the substrate, and then dissipated by the heat sink....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64H01L23/373
CPCH01L23/373H01L33/641
Inventor 黄宇
Owner 黄宇
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