Zener diode manufacturing method based on CMOS manufacturing process

Abstract

The invention provides a Zener diode manufacturing method based on a CMOS manufacturing process. A polysilicon deposition process, a Zener implanting process, a sidewall dielectric layer deposition process, a sidewall dielectric layer etching process and a source/drain implanting process are successively performed. The traditional Zener implanting process is performed before the sidewall dielectric layer deposition process, the sidewall dielectric layer etching process and the source/drain implanting process, thereby preventing substrate damage by the sidewall dielectric layer etching process and substrate damage in formation of amorphous structures which may caused by the source/drain implanting process, so that concentration distribution uniformity of impurities which are implanted into the Zener diode is improved, thereby obtaining a stable breakdown voltage in breakdown of the Zener diode, preventing defects of large leakage current and low uniformity of the leakage current before breakdown of the Zener diode, and improving market competitiveness of the product.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a Zener tube based on a CMOS manufacturing process. Background technique [0002] To manufacture a Zener diode, a traditional method requires the application of a CMOS (Complementary Metal Oxide Semiconductor) process: a polysilicon deposition process, a polysilicon etching process (Poly Etch), and a sidewall dielectric Layer deposition process and side wall dielectric layer etching process (Spacer Etch), drain source implantation process (Source / Drain Imp), and Zener implantation process (Zener Imp). In this traditional method, the Zener implantation process is placed behind the source-drain implantation process. At this time, the substrate surface has been damaged by the sidewall dielectric layer etching process, and the higher implant dose of the source-drain implantation process has There is a great chance to cause damage to the subst...

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Problems solved by technology

[0003] In order to solve at least one of the problems mentioned in the background art that the concentration distribution of zener implanted impurities is uneven, the breakdown voltage of zener breakd...

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