Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Selection method and selection system for physical blocks of 3D flash memory

A physical block and 3D technology, applied in the storage field, can solve problems such as not considering the performance parameters of physical blocks, and achieve the effect of reducing workload, ensuring correctness, and reducing writing errors

Active Publication Date: 2016-10-12
SHENZHEN UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method and system for selecting physical blocks of 3D flash memory, aiming to solve the problem that the existing 3D flash memory does not consider the performance parameters of the physical block itself when storing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Selection method and selection system for physical blocks of 3D flash memory
  • Selection method and selection system for physical blocks of 3D flash memory
  • Selection method and selection system for physical blocks of 3D flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0033] see figure 1 , figure 1 It is a schematic flowchart of a method for selecting a physical block of a 3D flash memory according to the first embodiment of the present invention. It mainly includes the following steps:

[0034] S101. When a write operation instruction is received, confirm whether the physical page of the latest physical block corresponding to the logical address of the write operation instruction can write data.

[0035] That is, when a write operation instruction is received, data is preferentially written into the physical page of the newest physical block corresponding to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is suitable for the technical field of storage and provides a selection method and a selection system for physical blocks of a 3D flash memory. The selection method comprises the following steps of confirming whether data can be written in a physical page of a latest physical block corresponding to a logic address of a writing operation instruction or not when the writing operation instruction is received; if the data cannot be written in the physical page, determining a blank physical block with the best performance from a blank physical block group of the 3D flash memory; and writing the data in the blank physical block with the best performance. According to the selection method, the performance of each blank physical block is considered in a data writing process, so that the generation of writing errors and read errors can be reduced, the data correctness can be ensured to the maximum extent, and the workload of ECC (Error Correcting Code) error correction is reduced.

Description

technical field [0001] The invention belongs to the technical field of storage, and in particular relates to a method and a system for selecting a physical block of a 3D flash memory. Background technique [0002] 2D NAND (flash memory) is a planar structure, while 3D NAND is a three-dimensional structure. The 3D structure is arranged in the form of vertical semiconductor channels. The multi-layer surrounding gate (GAA) structure forms a multi-gate memory cell transistor, which can effectively reduce Interference between stacks. 3D technology not only improves product performance by at least 20%, but also reduces power consumption by more than 40%. 3D flash memory not only improves the capacity, speed and reliability of products, but also structurally increases the physical area for storing charges, thereby improving reliability. Therefore, 3D flash memories are increasingly used. [0003] At present, when using 3D flash memory for storage, the selection method of blank p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06
CPCG06F12/0646
Inventor 王毅董丽莎张明旭毛睿李荣华廖好
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com