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Low-power-consumption full-CMOS reference source circuit based on subthreshold value

A reference source circuit, low power consumption technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of increasing process manufacturing procedures, incompatibility, increasing costs, etc., achieving low temperature coefficient and small implementation area , the effect of simple structure

Active Publication Date: 2016-09-28
SUN YAT SEN UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] But this structure has some shortcomings, in order to ensure the V with negative linear temperature parameter TH It will not be offset in the process of finding the difference, and then the special threshold tube M4 is introduced, which adds additional process manufacturing procedures and increases the cost
At the same time, this circuit is not compatible with the standard CMOS process that only has ordinary threshold voltage MOS tubes, and the portability of the circuit is not high, which limits the scope of use.

Method used

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  • Low-power-consumption full-CMOS reference source circuit based on subthreshold value
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  • Low-power-consumption full-CMOS reference source circuit based on subthreshold value

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Embodiment Construction

[0039] The present invention will be further described below in conjunction with the accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0040] The present invention utilizes the operating characteristics of CMOS transistors in the sub-threshold region to design a voltage reference source circuit with low power consumption, low temperature coefficient and small area. By using the current characteristics of CMOS operating in the saturation region and the sub-threshold region respectively to construct a suitable voltage relationship, generate a V DD irrelevant small output current, and then realize the voltage output with low temperature coefficient through the body bias mode.

[0041] Such as Figure 5 , a sub-threshold-based low-power full CMOS reference source circuit, including sequentially connecting a startup circuit unit, a current generation circuit unit, and an output active load circuit unit;

[0042] The starting circuit un...

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PUM

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Abstract

The invention discloses a low-power-consumption full-CMOS reference source circuit based on a subthreshold value. The low-power-consumption full-CMOS reference source circuit based on the subthreshold value comprises a start circuit unit, a current generating circuit unit and an active load circuit unit. The start circuit unit is used for providing a start current to enable the current to get into a normal work state. The current generating circuit unit is used for generating a current irrelevant to input power voltages. Due to the fact that part of MOS transistors work in a subthreshold state, the work current is low, and the power consumption of the circuit can be reduced. The output active load circuit unit outputs a zero temperature coefficient and low output voltages through the body polarization technology. The circuit has the advantages of being low in power consumption, low in temperature coefficient, wide in work voltage range, small in area and the like.

Description

technical field [0001] The invention relates to a reference source circuit with low power consumption, low temperature coefficient, wide working range and small area, more specifically, a low power consumption full CMOS reference source circuit based on sub-threshold. Background technique [0002] With the development of modern technology, integrated circuits have become the trend of circuit development. The reference source is an important part of the integrated circuit. It is widely used in power management chips, phase-locked loops, digital-to-analog conversion, and memory chips to provide reference voltages for the entire chip. The accuracy and stability of a reference source that does not change with temperature, power supply voltage, or even process is directly related to the performance of the entire chip. [0003] The integrated circuit continues to expand, and the circuit structure is becoming more and more complex. More circuit modules are integrated together, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 谭洪舟唐诗豪曾衍瀚王阳李毓鳌张鑫
Owner SUN YAT SEN UNIV
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