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Grower for effectively restraining gallium oxide crystal defects

A technology for crystal defects and growth devices, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effects of extending service life, reducing loss, and suppressing the content of impurity elements

Active Publication Date: 2016-09-28
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the problems existing in the prior art, the object of the present invention is to provide a growth device for effectively suppressing crystal defects in view of a large number of defects in the crystal caused by induction heating of the iridium crucible during the growth process of gallium oxide crystals

Method used

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  • Grower for effectively restraining gallium oxide crystal defects
  • Grower for effectively restraining gallium oxide crystal defects
  • Grower for effectively restraining gallium oxide crystal defects

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Embodiment

[0026] Embodiment: The present invention provides a growth device design that effectively suppresses defects in gallium oxide crystals, and is also suitable for growing large-sized gallium oxide crystals by using the guided mode method or the pulling method. Specifically, the following steps can be taken:

[0027] First, install heat preservation and heating thermal field components in the single crystal furnace. The thermal field components include a lower thermal insulation component 6 made of zirconia fiber boards that surrounds the heating element 8, an iridium crucible 7, and an oxide crucible that supports the iridium reflector 9. Zirconium inner insulation cylinder 4, upper insulation part 2 and middle insulation part 3 made of zirconia fiberboard, iridium reflective screen 9 and circular induction coil 10 surrounding the insulation component group. The purity of each thermal field component material is higher than 99.7%.

[0028] The heating element 8 is separated fro...

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Abstract

The invention discloses a grower for effectively restraining gallium oxide crystal defects. The grower comprises a plurality of thermal field components in a formed single crystal furnace, and the thermal field components are horizontally and concentrically mounted. A heating body and an iridium crucible are embedded into the center of a thermal field and heated by round induction coils, the heating body and the iridium crucible are separated, and a clearance is reserved between the heating body and the iridium crucible. Each thermal field component comprises a zirconia inner heat preservation barrel for supporting an iridium reflecting screen, an upper heat preservation component covering the iridium reflecting screen, a middle heat preservation component surrounding the zirconia inner heat preservation barrel, and a lower heat preservation component surrounding the iridium crucible and the heating body, and seed rod inlets are reserved in the upper heat preservation component. According to design of the grower, losses of the iridium crucible can be reduced, the content of impurity elements in crystals can be effectively restrained, therefore, the defects in the crystals can be restrained well, the service life of the crucible can be prolonged, and a foundation is laid for achieving mass production of gallium oxide single crystals with high quality and low cost.

Description

technical field [0001] The invention relates to crystal material growth technology, in particular to a growth device for effectively suppressing gallium oxide crystal defects. Background technique [0002] Gallium oxide material has a band gap of 4.9eV and a transmittance of about 80% in the deep ultraviolet region. It can be used to make ultraviolet lasers, various sensor components and imaging components. In addition, its breakdown electric field strength is about 20 times that of Si. Compared with SiC and GaN, gallium oxide materials can be used to manufacture high withstand voltage and low loss power semiconductor components, which is a promising alternative. with oxide semiconductor materials. However, gallium oxide has a high melting point (1740-1820°C), is easy to volatilize and decompose, and at the same time corrodes the crucible more severely, so impurities are easily introduced during the crystal growth process, resulting in more defects. Since gallium oxide has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B15/00
CPCC30B15/00C30B29/16
Inventor 徐永宽练小正于凯霍晓青张颖武张政程红娟李璐杰张志鹏
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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