A Transistor Vertical Cavity Surface Emitting Laser

Abstract

The invention discloses a transistor vertical-cavity surface-emitting laser (T-VCSEL), and belongs to the technical field of an integrated photoelectronic device. The T-VCSEL comprises a buffer layer, a lower end face distributed Bragg reflector, a collector region, a base region, an emitter region and an upper end face distributed Bragg reflector which are successively arranged according to an epitaxial growth sequence. The T-VCSEL also comprises a collector, a base electrode and an emitter electrode which are connected with the collector region, the base region and the emitter region. A quantum well active region is arranged in the base region. The collector is arranged on the back of the buffer layer. The buffer layer and the lower end face distributed Bragg reflector are equipped with doping types same as the doping type of the collector region. According to the T-VCSEL, the length of the transmission path of carriers in the collector region is reduced from the existing tens of microns to several microns, and the carriers are imported from the emitter region; therefore, the bad influence of the voltage drop of an internal resistor on the control of the working state of the device can be effectively reduced; and moreover, the transverse distribution of the potential in the collector region is improved.

Description

Technical field [0001] The invention relates to a Transistor Vertical-Cavity Surface-Emitting Laser (T-VCSEL for short), which belongs to the technical field of integrated optoelectronic devices. Background technique [0002] High-speed vertical cavity surface emitting lasers (VCSELs) based on III-V materials have been widely used due to their easy fiber coupling, low threshold current, large direct modulation bandwidth, support for on-chip detection, easy implementation of two-dimensional arrays, and low production costs. Used in short-distance optical communication networks, data centers, and consumer electronic products such as USB, PCI Express, and HDMI. At present, the world's major VCSEL manufacturers have launched products covering 850nm to 1550nm wavelengths and a single channel rate of 25Gb / s. However, with the continuous improvement of bandwidth requirements for short-distance optical communications including on-chip and inter-chip, how to further increase the direct m...

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Problems solved by technology

However, whether it is the T-VCSEL structure proposed by patent SE:2013051451:W or other existing T-VCSEL structures, there is a common key problem that restricts the further improvement of device performance: T-VCSEL increases with the input current, the device The working state of the switch rapidly changes from amplification to saturation, thus losing the function of enhancing the modulation bandwidth

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