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Method and device for manufacturing black silicon battery

A manufacturing method and a technology for manufacturing a device are applied in the field of the manufacturing method and device of a black silicon battery, and can solve the problems of difficulty in improving the uniformity of diffusion resistance and conversion efficiency, difficult to control the uniformity of the SiO2 layer, and difficult to control the uniformity of the gas. , to achieve the effect of improving electrical properties, uniform surface resistance and good uniformity

Active Publication Date: 2018-03-06
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Application Information

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Problems solved by technology

However, due to the long diffusion furnace tube, it is difficult to control the uniformity of the gas, and there are differences in the oxidation time of silicon wafers in the furnace, so the uniformity of the SiO2 layer formed by the oxidation of silicon wafers is also difficult to control, which is difficult to improve. Uniformity of Diffusion Square Resistance and Conversion Efficiency

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  • Method and device for manufacturing black silicon battery
  • Method and device for manufacturing black silicon battery

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Embodiment Construction

[0038] As mentioned in the background technology section, in the current solar cell production process, it is difficult to control the uniformity of the gas due to the long diffusion furnace tube, and there are differences in the oxidation time of the silicon wafer in the furnace, so the SiO formed by the oxidation of the silicon wafer 2 The uniformity of the layer is also difficult to control, so it is difficult to improve the uniformity of the diffusion resistance and the conversion efficiency.

[0039] Based on this, an embodiment of the present invention provides a method for manufacturing a black silicon battery, including:

[0040] Step 1, using O3 components to oxidize the P-type diamond wire silicon wafer, the O around the P-type diamond wire silicon wafer 2 The concentration of flow-through is higher than that of O in the central region 2 flow through concentration;

[0041] Step 2, performing phosphorus diffusion on the P-type diamond wire silicon wafer;

[0042] ...

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Abstract

The invention discloses a manufacturing method and device of a black silicon cell, wherein the manufacturing method comprises the steps of: 1, carrying out oxidation on a P type diamond wire silicon chip, wherein the concentration of O2 flowing through the area around P type diamond wire silicon chip is higher than that of O2 flowing through the central area; and 2, carrying out P diffusion on the P type diamond wire silicon chip. According to the invention, the P type diamond wire silicon chip is oxidized before P diffusion, the concentration of O2 flowing through the area around P type diamond wire silicon chip is higher than that of O2 flowing through the central area, the thickness of the oxidation layer deposited in central area of the P type diamond wire silicon chip is smaller than the thickness of the oxidation layer deposited in the peripheral area, and P diffusion is slowed by the oxidation layer, so that the evenness of P diffusion is better, the superficial diffusion square resistance is more uniform, and the improvement of the electric performance of the black silicon cell is facilitated.

Description

technical field [0001] The invention relates to the field of photovoltaic module manufacturing, in particular to a method and device for manufacturing a black silicon battery. Background technique [0002] Due to the increasingly serious problem of environmental pollution and the increasing shortage of ore and other energy sources, the solar photovoltaic industry has developed rapidly in recent years. The core of the photovoltaic industry—solar cells are mainly prepared by high-purity silicon wafers, which include related processes such as texturing, diffusion, PECVD, and screen printing machine sintering. The processes of each process are relatively complicated, especially the diffusion. It is to prepare the solar cell PN junction, the uniformity of the diffusion process and the preparation of the PN junction have a great influence on the conversion efficiency of the solar cell. [0003] At present, in the production process of solar cells, the cleaned silicon wafers will ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 叶飞蒋方丹金浩
Owner ZHEJIANG JINKO SOLAR CO LTD
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