Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method and equipment for preparing polytetrafluoroethylene circuit boards

A polytetrafluoroethylene and circuit board technology, applied in the field of electronics, can solve the problems of inability to meet high-density assembly requirements, insufficient film bonding force, weak peel resistance, etc., and achieve improved peel strength and high peel resistance. , the effect of enhanced peel strength

Active Publication Date: 2018-11-09
广东省广新创新研究院有限公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The base material formed by the adhesive can no longer meet the high-density assembly requirements
And, in the base material circuit board that existing polytetrafluoroethylene adopts, when going through follow-up processes such as circuit pattern formation process or electrolysis process between each film layer (such as film base material and conductive layer), often occur bonding strength Problems such as drop and easy peeling
It can be seen that the film layer formed by the existing manufacturing method has insufficient bonding force and weak anti-peeling strength, which is difficult to apply to harsh environments

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method and equipment for preparing polytetrafluoroethylene circuit boards
  • A method and equipment for preparing polytetrafluoroethylene circuit boards
  • A method and equipment for preparing polytetrafluoroethylene circuit boards

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0040] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0041] Below in conjunction with accompanying drawing, each preferred embodiment of the present invention is described further:

[0042] method embodiment

[0043] In this embodiment, a metal film layer is prepared on the base layer, the selected base layer is polytetrafluoroethylene, refer to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a making method and a making apparatus for depositing a metal film with ultrahigh bonding strength on the surface of a polytetrafluoroethylene substrate based on an ion beam technology, and a making method and a making apparatus of a circuit board. The making method for depositing the metal film with ultra strong bonding force comprises the following steps: 1, making a metal "injection + diffusion" layer: carrying out large-beam cleaning on the substrate by using a gas ion source, and injecting a metal element to the substrate layer by using a 40KV high-energy metal vapor vacuum arc (MEVVA) ion source to form the metal "injection + diffusion" layer; and 2, making the metal film: depositing the metal film with the thickness of 1-10[mu]m by using a 90DEG magnetic filtered cathode vacuum arc (FCVA) system. The metal film and a polytetrafluoroethylene base material made by adopting the making methods and the making apparatuses have very high bonding force and very high stripping resistance.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a preparation method and equipment for a metal "injection+diffusion" layer on the surface of a polytetrafluoroethylene base material. Background technique [0002] At first, the substrates of electronic circuits were PCB boards and flexible circuit boards, but with the advancement of science and technology and the development of various information terminal equipment, PTFE substrates were discovered and used in various fields. Polytetrafluoroethylene is also known as PTFE. Due to factors such as fluorine atoms in the molecular structure, PTFE exhibits high chemical stability, strong high and low temperature resistance, outstanding non-stickiness, abnormal lubricity and excellent electrical insulation properties. Aging resistance and radiation resistance, extremely small water absorption and other characteristics are known as the "king of plastics". Widely used in aerospace, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/32C23C14/02C23C14/48C23C14/14H05K3/38
CPCC23C14/022C23C14/024C23C14/14C23C14/325C23C14/48H05K3/38
Inventor 廖斌王宇东罗军张旭吴先映
Owner 广东省广新创新研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products