A logic gate circuit based on magnetic field-triggered superlattice phase transition unit

Abstract

The present invention discloses a logic gate circuit based on a magnetic field triggered superlattice phase-change unit. The logic gate circuit comprises a magnetic field generation module, a superlattice phase-change module, a voltage divider resistor and a controllable switch element; a switch of a resistance state of the superlattice phase-change module is controlled by applying a pulsed magnetic field and a voltage pulse; the voltage divider resistor is connected to the superlattice phase-change module, and a connection point thereof acts as an output terminal of the logic gate circuit; the controllable switch element is disposed on a connection line between the superlattice phase-change module and the voltage divider resistor; by switching on the controllable switch element, logic writing is carried out by applying high-voltage or low-voltage pulse signals to the superlattice phase-change module; by switching off the controllable switch element, a logic operation result is read from an output terminal of the logic gate circuit; logic functions such as AND, OR, NOT, NOR, NAND, XNOR, XOR, implication, inverse implication, multi-terminal AND, multi-terminal NAND, multi-terminal OR, and multi-terminal NOR can be achieved; the circuit structure is simple and achieves a range of logic functions, and the circuit is simple in structure, low in power consumption and non-volatile.

Description

technical field [0001] The invention belongs to the field of digital circuits, and more specifically relates to a logic gate circuit based on a magnetic field-triggered superlattice phase change unit. Background technique [0002] The architecture followed by modern computers is the von Neumann machine structure, which separates processing and storage, which greatly restricts the performance of computers in processing real-time massive data, resulting in the "von Neumann performance bottleneck". To solve this problem, logic devices based on non-volatile memory came into being. Compared with CMOS circuit memory, this type of device has a simpler structure, faster read and write speed, higher durability, and lower power consumption; and it can still maintain data after power off; and, non-volatile The memory has a clear distinction between high-resistance and low-resistance, and can represent logic states 0 and 1, thereby realizing the operation of state logic, and the result...

AI Technical Summary

Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a logic gate circuit based on a magnetic field-triggered superlattice phase change unit, which solves the problem of complex structure and high power consumption of existing logic devices based on non-volatile memory. , technical problems of poor stability

Images