Film transistor, display substrate and display device

Abstract

The invention discloses a film transistor, a display substrate and a display device. The film transistor comprises an active layer, a source electrode and a drain electrode, wherein the drain electrode is half surrounded by the source electrode, the first portion of the drain electrode is at an inner portion of an opening of the source electrode, and the second portion of the drain electrode extends from the inner portion of the opening of the source electrode to an outer portion of the opening of the source electrode. Through the film transistor, parasitic capacitance between a grid electrode and the source electrode can be reduced and stabilized, so adverse phenomena such as splash screen display can be avoided.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a display substrate and a display device. Background technique [0002] In TFTLCD (ThinFilmTransistorLiquidCrystalDisplay, thin film field effect transistor liquid crystal display), the charging of the pixel electrode is controlled by turning on and off the TFT. If you want to improve the charging efficiency, you can increase the charging capacity. A very important means is to increase The width-to-length ratio (W / L) of the channel of the TFT. Since the single-channel design occupies too much space and affects the aperture ratio, a double-channel structure is introduced. The ordinary double-channel such as figure 1 As shown, the channel width is roughly calculated as 2(2a+b). When increasing the width-to-length ratio of a dual-channel TFT, the W value is generally increased by increasing the a value, but at the same time, the space occupied by the TFT w...

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Problems solved by technology

When increasing the width-to-length ratio of a dual-channel TFT, the W value is generally increased by increasing the a value, but at the same time it will increase the space occupied by the TFT, resulting in a decrease in the aperture ratio.

[0003] from figure 1 It can be seen from the existing double-channel structure shown that since the space occupied by the TFT is relatively large, the parasitic capacitance Cgs between the gate and the source is likely to increase, resulting in an increase in ΔVp

Moreover, there are two drains (Drain electrodes) in the existing double-channel structure, which will still cause the parasitic capacitance between the gate and the source to be unstable under the condition of small fluctuations in the process, which will easily lead to flicker and other related problems. Occurrence of adverse phenomena

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