Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Formation method of semiconductor structure

A semiconductor and pattern layer technology, applied in the field of semiconductor structure formation, can solve the problems of poor pattern quality and affecting the yield of semiconductor structures, etc.

Active Publication Date: 2016-06-29
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the prior art, when the layer to be etched is etched with a patterned mask layer, the quality of the pattern formed in the layer to be etched is poor, which affects the yield of the formed semiconductor structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] It can be seen from the background art that the yield rate of semiconductor structures formed in the prior art needs to be improved.

[0037] It has been found through research that oxide materials are usually used as a mask layer in the prior art, and a photoresist layer or a laminated structure of a bottom anti-reflection layer and a photoresist layer is formed on the surface of the mask layer, and there are openings in the photoresist layer; Then, using the photoresist layer with openings as a mask, the mask layer is etched, and the opening pattern of the photoresist layer is transferred into the mask layer.

[0038] When the opening feature size of the photoresist layer is small, if the thickness of the photoresist layer is too thick, the opening morphology of the photoresist layer will be deteriorated, and even easily lead to the collapse of the photoresist layer. Therefore, with the continuous reduction of the size of the semiconductor structure, the characteristi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for forming a semiconductor structure, comprising: providing a base; forming an initial mask layer on the base; performing doping treatment on the initial mask layer to convert the initial mask layer into a doped mask layer; A first pattern layer having a first opening is formed on the surface of the doping mask layer; using the first pattern layer as a mask, a dry etching process is used to etch the doping mask layer along the first opening, forming a second opening through the doping mask layer, and the etching rate of the doping mask layer in the dry etching process is higher than the etching rate of the initial mask layer; removing the first pattern layer. The etching rate of the doped mask layer in the dry etching process of the present invention is greater than the etching rate of the initial mask layer, so there is no need to form an organic distribution layer, avoiding the problem of residual organic distribution layer materials, and improving the initial mask layer and the second mask layer. Second, the cleanliness of the opening improves the yield rate of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] Semiconductor technology continues to move towards smaller process nodes driven by Moore's Law. With the continuous advancement of semiconductor technology, the functions of devices are becoming more and more powerful, but the difficulty of semiconductor manufacturing is also increasing day by day. Photolithography technology is the most critical production technology in the semiconductor manufacturing process. With the continuous reduction of semiconductor process nodes, the existing light source lithography technology can no longer meet the needs of semiconductor manufacturing. Extreme ultraviolet lithography (EUV), Multi-beam maskless technology and nanoimprint technology have become the research hotspots of next-generation lithography candidate technologies. However, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/033H01L21/3105
Inventor 张海洋张城龙
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com