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PIN limiter electrothermal integration analysis method under high-power electromagnetic pulse action

An electromagnetic pulse and analysis method technology, applied in the direction of instruments, electrical digital data processing, special data processing applications, etc., can solve the problems of huge amount of calculation, inability to simulate, waste of time, etc., and achieve the effect of flexible modeling and convenient division

Active Publication Date: 2016-06-29
NANJING UNIV OF SCI & TECH
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Problems solved by technology

However, due to the Yee grid characteristics of FDTD, it cannot simulate the model with complex structure.
When FEM is applied to the time domain, each time step involves the solution of linear equations, the amount of calculation is very large, and it is a waste of time

Method used

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  • PIN limiter electrothermal integration analysis method under high-power electromagnetic pulse action
  • PIN limiter electrothermal integration analysis method under high-power electromagnetic pulse action
  • PIN limiter electrothermal integration analysis method under high-power electromagnetic pulse action

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Experimental program
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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0018] 1. Establish the physical model of the PIN diode to be solved, and use the curved hexahedron to dissect the physical model to obtain the structural information of the PIN diode physical model, that is, the number of the hexahedron unit and the physical coordinate value of each node on the hexahedron.

[0019] The physical model of the PIN diode used in the calculation is p + n + 1D device model of the structure with a substrate of n + Silicon material, doped with a donor concentration of 10 19 cm -3 , the doping adopts a Gaussian distribution. An n-type epitaxial layer with a thickness of 10 μm was grown on the substrate, and the doping donor concentration was 10 15 cm -3 . The acceptor impurity diffuses into the epitaxial layer to form a p-region, the impurity distribution is Gaussian, and the concentration at the pn junction (depth is 3 μm) is...

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Abstract

The invention discloses an electro-thermal integrated analysis method of a PIN limiter under the action of high-power electromagnetic pulse, and provides the temperature distribution inside the PIN diode in the limiter circuit under the action of the high-power pulse. In this method, the time-domain spectral element method is used to calculate the semiconductor drift-diffusion equations, and the carriers inside the PIN diode are obtained. , distribution and potential distributed. Then, the electric field inside the semiconductor is obtained and current density On the basis of , starting from the heat conduction equation, the internal temperature of the PIN diode is calculated distributed. Finally, the Newton iterative form of the limiter circuit equation is deduced, and coupled with the drift-diffusion equation and heat conduction equation, the physical model is used to calculate the actual voltage across the PIN diode and the temperature distribution inside the PIN diode.

Description

technical field [0001] The invention belongs to the electrothermal integrated analysis of semiconductor devices, in particular to a numerical analysis method designed for a PIN tube limiter. Background technique [0002] High-power electromagnetic pulses refer to electromagnetic pulses with a microwave pulse peak power above 100MW and a frequency in the range of 0.3-300GHz. High-power microwave weapons radiate microwaves generated by high-power microwave sources through high-gain directional antennas to irradiate targets with extremely high intensity, killing personnel and destroying electronic equipment (Tan Xianyu, Technical status and development of new concept weapons of high-power microblog[ J]. Aviation Weapons, 2004, 1:8-11). High-power electromagnetic pulses can burn electrical components or affect the performance of electrical subsystems. There are two main ways of damaging effects of high-power electromagnetic pulses on electronic equipment: (1) Under the action ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 丁大志陈如山樊振宏包华广盛亦军
Owner NANJING UNIV OF SCI & TECH
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