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Preparation method of molybdenum-doped tungsten oxide gas-sensitive material

A gas-sensitive material, tungsten oxide technology, applied in tungsten oxide/tungsten hydroxide, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problems of poor selectivity, slow response speed, low sensitivity, etc., to achieve Accurate and detailed data, good gas sensitivity and high purity

Active Publication Date: 2016-06-29
TAIYUAN UNIV OF TECH
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Problems solved by technology

[0004] Tungsten oxide is often used as the gas sensitive material used in N-type semiconductor metal oxides. Tungsten oxide has good gas-sensing properties. Nanoscale tungsten oxide has a large specific surface area, which increases the contact area between sensitive materials and gases. The component tungsten oxide has the defects of low sensitivity, slow response speed, and poor selectivity, so the tungsten oxide material must be modified to better exert the gas-sensing characteristics of the tungsten oxide material

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Embodiment Construction

[0074] The present invention will be further described below in conjunction with accompanying drawing:

[0075] figure 1 As shown, it is the hydrothermal synthesis state diagram of molybdenum-doped tungsten oxide. The position of each part must be correct, the ratio should be adjusted, and the operation should be performed in sequence.

[0076] Quantities of chemicals used in preparation are determined in pre-set ranges in grams, milliliters, centimeters 3 is the unit of measurement.

[0077] The hydrothermal synthesis of molybdenum-doped tungsten oxide is carried out in the reactor, and is completed in the process of heating and holding in the heating furnace;

[0078] The heating furnace is vertical, the lower part of the heating furnace 1 is the first furnace base 2, and the upper part is the first furnace cover 3; The kettle 5 and the reaction kettle 5 are built with a polytetrafluoroethylene container 6, and the polytetrafluoroethylene container 6 is built with a mixed...

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Abstract

The invention relates to a preparation method of molybdenum-doped tungsten oxide gas-sensitive material and aims to overcome the defect that a single-component tungsten oxide gas-sensitive material is low in sensitivity, low in response speed and poor in selectivity. The nano-scale molybdenum-doped tungsten oxide gas-sensitive material is prepared by doping molybdenum to tungsten oxide and subjecting tungsten chloride and ammonium molybdate to hydrothermal synthesis, vacuum calcining and grinding and screening. The preparation method employs advanced process, data are precise and elaborate, the product is light yellow powder, the particle diameter of the powder is < / =200 nm, the product has high purity up to 99.5% and has good gas sensitivity up to 26.5 for 10 ppm hydrogen sulfide, the product is useful in various gas sensors, and the preparation method is an advanced method for preparing molybdenum-doped tungsten oxide gas-sensitive materials.

Description

technical field [0001] The invention relates to a method for preparing a molybdenum-doped tungsten oxide gas-sensitive material, which belongs to the technical field of semiconductor gas-sensitive material preparation and application. Background technique [0002] With the development of industrial technology, the discharge of flammable, explosive, toxic and harmful gases is increasing day by day, which can easily cause air pollution and even damage human health. In order to control the content of toxic and harmful gases, gas sensors are often used for detection. [0003] The most commonly used materials in gas sensors are gas-sensing materials. Semiconductor metal oxide sensitive materials are the core components of gas sensors, so gas-sensing materials will directly affect the measurement performance of gas sensors. [0004] Tungsten oxide is often used as the gas sensitive material used in N-type semiconductor metal oxides. Tungsten oxide has good gas-sensing properties. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/02B82Y30/00B82Y40/00
CPCC01G41/02C01P2002/72C01P2004/03C01P2004/30C01P2004/62C01P2004/64C01P2006/80
Inventor 胡杰孙永娇赵振廷李明伟李刚桑胜波张文栋
Owner TAIYUAN UNIV OF TECH
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