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Large-area preparation method of perovskite films suitable for various substrate shapes

A perovskite and thin-film technology, which is applied in the field of large-scale preparation of perovskite thin films, can solve the problems that limit the large-scale preparation of perovskite thin films, limit the development and application of flexible perovskite photovoltaic devices, and difficult spin-coating operations. Avoid the investment of expensive vacuum evaporation equipment, low-cost high-quality preparation, and avoid the effect of glove box operation

Active Publication Date: 2016-06-08
HEFEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both the above-mentioned solution method and gas-phase assisted method require spin-coating precursor solution. The use of solution spin-coating method limits the large-scale preparation of perovskite films. The spin-coated films have disadvantages such as rough and porous, poor repeatability, and film coverage.
More importantly, the spin-coating method cannot prepare large-area films, and it is difficult to scale up industrial applications.
At the same time, the substrate material of the spin coating process must be a rigid substrate with a planar structure. For rigid substrates with complex shapes such as curved surfaces and spherical surfaces, it is difficult to prepare by solution spin coating; and for flexible substrates, it is more difficult to perform spin coating operations. Limiting the development and application of flexible perovskite photovoltaic devices

Method used

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  • Large-area preparation method of perovskite films suitable for various substrate shapes
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  • Large-area preparation method of perovskite films suitable for various substrate shapes

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Embodiment 1

[0028] In this embodiment, a perovskite light-absorbing layer film is prepared with a curved rigid glass as a substrate, and the specific steps are as follows:

[0029] a. Use soapy water, acetone, and ethanol to ultrasonically clean the curved glass substrate for 20 minutes, then dry it with nitrogen wind, and set aside;

[0030] b. In a 250mL beaker, add 20mL of Pb(NO 3 ) 2 solution, 10mL of 1.5M thiourea solution, 26mL of 26% ammonia water and 144mL of deionized water were added, and then stirred at room temperature for 5 minutes at a speed of 1000rpm to obtain a lead sulfide reaction solution.

[0031] c. Put the cleaned substrate into the lead sulfide reaction solution, then put the beaker in a water bath at 70°C, and react for 30 minutes; after the reaction in the chemical bath, take out the substrate and rinse the surface of the sample with deionized water, Dry the sample with nitrogen wind to obtain a high-quality PbS precursor film;

[0032] d. Combine PbS film wit...

Embodiment 2

[0038] In this embodiment, the perovskite light absorbing layer CH is prepared in the same manner as in Example 1. 3 NH 3 PB 3 thin film, the only difference is that the temperature of the heating stage in step d is 180°C, and the reaction time is 30 minutes.

[0039] After characterization, the CH prepared in this example 3 NH 3 PB 3 The film is similar to Example 1, the surface is uniform and smooth, and the film quality is high.

Embodiment 3

[0041] In this embodiment, the perovskite light absorbing layer CH is prepared in the same manner as in Example 1. 3 NH 3 PB 3 thin film, the only difference is that step d is carried out as follows:

[0042] Put the PbS thin film as a reactant on a heating platform, put 2g of iodine beside it, cover it with a black cover, heat to 100°C, and react for 60 minutes to obtain PbI 2 film;

[0043] PbI 2 The film was immersed in CH at a concentration of 10 mg / mL 3 NH 3 I in isopropanol solution, the soaking time is 2 minutes, the soaking temperature is 25 ℃, after the reaction is completed, take it out and dry it to get CH 3 NH 3 PB 3 film.

[0044] After characterization, the CH prepared in this example 3 NH 3 PB 3 The film is similar to Example 1, the surface is uniform and smooth, and the film quality is high.

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Abstract

The invention discloses a large-area preparation method of perovskite films suitable for various substrate shapes. The method is characterized by comprising steps as follows: lead nitrate is used as a lead source, thiourea is used as a sulfur source, ammonia water is used as a complexing agent, the reaction speed and temperature are controlled, and lead sulfide films are produced on substrates in any shapes through chemical baths; then the lead sulfide films are converted into perovskite light absorption layer film materials with a solution immersion method or a chemical vapor deposition method. Perovskite light absorption layers are prepared through the chemical baths in combination with the solution immersion method or the chemical vapor deposition method, the method has the advantages of low cost, simplicity in operation, capability of realizing large-area amplification and the like, meanwhile, the prepared films are not affected by the substrate shapes and materials, and the high-quality perovskite films can be prepared on rigid or flexible substrates in various complex shapes such as curved surfaces, spherical surfaces and the like.

Description

technical field [0001] The invention relates to a large-area preparation method of a perovskite thin film suitable for various substrate shapes, and belongs to the field of preparation technology of thin-film solar cell photovoltaic devices. Background technique [0002] With the rapid development of human society, people's demand for energy is also increasing rapidly, which leads to the gradual aggravation of energy crisis and environmental pollution, which triggers people's urgent demand for sustainable energy. Among various renewable energy sources such as wind power, hydropower, geothermal energy, biomass energy and solar energy, solar energy is safe, non-polluting, not restricted by geographical conditions, has the widest application range, and has the most development prospects. In 2009, the organic-inorganic hybrid perovskite was applied to the photovoltaic field for the first time by Miyasaka et al., using CH 3 NH 3 PbI2 3 As a light absorbing layer, a photoelectr...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 罗派峰刘兆范夏伟周圣稳
Owner HEFEI UNIV OF TECH
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