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Preparation method for ZnO nanocrystalline thin-film transistor type UV detector

A thin film transistor and ultraviolet detector technology, which is applied in nanotechnology, nanotechnology, semiconductor devices, etc., can solve the problems of unseen thin film transistor ultraviolet detectors, etc., and achieves high electron transmission speed, simple preparation method and high yield. Effect

Active Publication Date: 2016-06-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the traditional commercial photomultiplier tubes and silicon-based ultraviolet detectors with relatively mature technology are still the mainstays in the market, and there are no ultraviolet detectors with thin-film transistor structures.

Method used

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  • Preparation method for ZnO nanocrystalline thin-film transistor type UV detector

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Experimental program
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Effect test

Embodiment 1

[0023] 1) Weigh 0.6585g of Zn(CH 3 COOH) 2 2H 2 O was dissolved in 30mL dimethyl sulfoxide to obtain A solution;

[0024] Weigh 0.9968g of (CH 3 ) 4 NOH·5H 2 O was dissolved in 10mL ethanol to obtain solution B;

[0025] Slowly add the B solution to the A solution, and stir the reaction at room temperature for 2 hours to obtain the mixed solution C;

[0026] Add 40mL of ethyl acetate to solution C to precipitate ZnO nanocrystals, pour off the supernatant after centrifugation, add 10mL ethanol and 160uL ethanolamine to dissolve ZnO nanocrystals, then add 20mL ethyl acetate to precipitate ZnO nanocrystals, centrifuge Then pour off the supernatant, finally add 2mL of ethanol, and filter with a 0.22um PTFE filter head to obtain a colloidal dispersed phase of ZnO nanocrystals.

[0027] 2) Prepare SiO with a thickness of 300nm on a clean low-resistance Si sheet (1) with a resistivity of 0.001-0.005Ω·cm 2 insulating layer (2), again in SiO 2 The ZnO nanocrystalline colloidal...

Embodiment 2

[0031] 1) Weigh 0.6585g of Zn(CH 3 COOH) 2 2H 2 O was dissolved in 30mL dimethyl sulfoxide to obtain A solution;

[0032] Weigh 0.9968g of (CH 3 ) 4 NOH·5H 2 O was dissolved in 10mL ethanol to obtain solution B;

[0033] Slowly add the B solution to the A solution, and stir the reaction at room temperature for 2 hours to obtain the mixed solution C;

[0034] Add 40mL of ethyl acetate to solution C to precipitate ZnO nanocrystals, pour off the supernatant after centrifugation, then add 10mL ethanol and 160uL ethanolamine to dissolve ZnO nanocrystals, then add 50mL ethyl acetate to precipitate ZnO nanocrystals, centrifuge Finally, the supernatant was poured off, and finally 4 mL of ethanol was added, and the colloidal dispersed phase of ZnO nanocrystals was obtained after filtering with a 0.22 um PTFE filter head.

[0035] 2) Prepare SiO with a thickness of 300nm on a clean low-resistance Si sheet (1) with a resistivity of 0.001-0.005Ω·cm 2 insulating layer (2), again in...

Embodiment 3

[0039] 1) Weigh 0.6585g of Zn(CH 3 COOH) 2 2H 2 O was dissolved in 30mL dimethyl sulfoxide to obtain A solution;

[0040] Weigh 0.9968g of (CH 3 ) 4 NOH·5H 2 O was dissolved in 10mL ethanol to obtain solution B;

[0041] Slowly add the B solution to the A solution, and stir the reaction at room temperature for 24 hours to obtain the mixed solution C;

[0042]Add 40mL of ethyl acetate to solution C to precipitate ZnO nanocrystals, pour off the supernatant after centrifugation, then add 10mL ethanol and 160uL ethanolamine to dissolve ZnO nanocrystals, then add 50mL ethyl acetate to precipitate ZnO nanocrystals, centrifuge Finally, the supernatant was poured off, and finally 4 mL of ethanol was added, and the colloidal dispersed phase of ZnO nanocrystals was obtained after filtering with a 0.22 um PTFE filter head.

[0043] 2) Prepare SiO with a thickness of 300nm on a clean low-resistance Si sheet (1) with a resistivity of 0.001-0.005Ω·cm 2 insulating layer (2), again in...

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Abstract

The invention discloses a preparation method for a ZnO nanocrystalline thin-film transistor type UV detector. The UV detector successively comprises a low-resistance Si layer, a SiO2 insulating layer, a ZnO nanocrystalline layer and an Au electrode from bottom to top. The preparation method comprises the steps of firstly, preparing a ZnO nanocrystalline colloid dispersed phase; secondly, conducting the spin coating process of the colloid dispersed phase on the SiO2 surface of Si / SiO2, and then annealing; finally, plating the Au electrode to complete the preparation of the UV detector. Compared with a traditional UV detector, the above UV detector prepared through the above method is low in dark current, high in response sensitivity, quick in response time, simple in structure and low in manufacturing cost. Therefore, the method has an important application value in the fields of military, civilian and special aspects.

Description

technical field [0001] The invention relates to a preparation method of an ultraviolet detector, which belongs to the technical field of semiconductor devices. Background technique [0002] Ultraviolet detection technology is a new type of military-civilian dual-use technology developed after infrared detection technology and laser technology. It is widely used in space communication, missile early warning, pollution detection and biomedicine. At present, the traditional commercial photomultiplier tubes and silicon-based ultraviolet detectors with relatively mature technology are still the main products in the market, and there are no ultraviolet detectors with thin film transistor structures. [0003] ZnO is an important new type of wide-bandgap semiconductor material. It has a direct bandgap energy band structure, a room temperature bandgap width of 3.37eV, exciton binding energy as high as 60meV, high visible light transmittance, stable physical and chemical properties, a...

Claims

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Application Information

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IPC IPC(8): H01L31/18B82Y30/00
CPCB82Y30/00H01L31/1836Y02P70/50
Inventor 潘新花王伟豪戴文叶志镇
Owner ZHEJIANG UNIV
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