non-volatile memory

Abstract

The invention discloses a non-volatile memory, which is arranged on a substrate including a peripheral circuit area and a memory unit area. Non-volatile memory includes floating gate transistors, transistors, self-aligned barrier layers, stretch layers, and contact etch stop layers. The floating gate transistor is provided in the memory cell area. The transistor is provided in the peripheral circuit area. The self-aligned barrier layer is disposed on the floating gate of the floating gate transistor. The stretch layer is only provided on the floating gate. A contact etch stop layer covers the entire transistor.

Description

technical field [0001] The present invention relates to a semiconductor element, and more particularly to a non-volatile memory. Background technique [0002] When the semiconductor enters the deep sub-micron (Deep Sub-Micron) manufacturing process, the size of the element is gradually reduced. For the memory element, it means that the size of the memory cell is getting smaller and smaller. On the other hand, as information electronic products (such as computers, mobile phones, digital cameras or personal digital assistants (PDA)) need to process and store more data, the memory capacity required in these information electronic products It's getting bigger and bigger. For such a situation where the size is reduced but the memory capacity needs to be increased, how to manufacture memory elements with reduced size, high integration, and quality is a common goal of the industry. [0003] The non-volatile memory element has become a memory element widely used in personal comput...

AI Technical Summary

Problems solved by technology

The contact etch stop layer is made of silicon nitride formed by plasma-enhanced chemical vapor deposition, which will cause the floating gate transistor to have low on-current (Low On Current) and poor retention performance.

However, if the material of the contact etch stop layer is changed, the performance of the transistors in the peripheral circuit area will be affected.

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