Stannous sulfide and magnesium-doped zinc oxide thin film solar cell and preparation method thereof

Abstract

The invention discloses a stannous sulfide and magnesium-doped zinc oxide thin film solar cell and a preparation method thereof. The preparation method comprises the following steps of firstly taking a transparent conductive substrate, and sequentially depositing n-type magnesium-doped zinc oxide thin film lamination layers with different magnesium doping concentrations on the transparent conductive substrate by a magnetron sputtering method or an ultrasonic spraying method; secondly, depositing a p-type stannous sulfide thin film on the n-type magnesium-doped zinc oxide thin film lamination layers by a plasma enhanced chemical vapor deposition method, evaporating a layer of aluminum film on the p-type stannous sulfide thin film, and preparing the aluminum film into a porous aluminum oxide thin film by an electrochemical anodic oxidation method; and finally, respectively leading metal electrodes out of the p-type stannous sulfide thin film and the transparent conductive substrate by a silk screen printing method or by laser grooving. The preparation method has the advantages that the response range of a traditional stannous sulfide thin film solar cell to spectrum is expanded, the light scattering resistant capability of the porous aluminum oxide thin film is also fully developed, and the full-spectrum absorption rate and the photoelectric conversion efficiency of the solar cell are improved.

Description

technical field [0001] The invention relates to a tin sulfide and magnesium-doped zinc oxide thin-film solar cell and a preparation method thereof. Background technique [0002] Tin sulfide thin-film solar cells are becoming a new type of solar cell because the optical band gap of the absorbing layer material, tin sulfide, is close to the optimal band gap of 1.5eV for solar cells, and the raw materials are abundant, cheap, and have good environmental compatibility. A hot topic in solar cell research. At present, a typical tin sulfide thin film solar cell is composed of an n-type zinc oxide thin film as a window layer, a sulfur-doped zinc oxide thin film as a buffer layer, and a p-type tin sulfide thin film as an absorber layer. The battery has a simple structure and low manufacturing cost, but also has disadvantages and deficiencies. First, the bandgap width of each semiconductor thin film layer of the tin sulfide thin film solar cell covers a limited range, resulting in l...

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Problems solved by technology

The battery is simple in structure and low in manufacturing cost, but it also has disadvantages and deficiencies

First, the bandgap width of each semiconductor thin film layer of the tin sulfide thin film solar cell covers a limited range, resulting in low light absorption efficiency.

Second, after using sulfur-doped zinc oxide as a buffer layer for several months, the fill factor drops significantly, and the performance is unstable

Third, the current conversion efficiency of tin sulfide thin film solar cells is still at a low level, and there is still room for improvement in terms of increasing incident light absorption.

The above shortcomings restrict the development of traditional tin sulfide (SnS) thin film solar cells, and people urgently need to find a better tin sulfide (SnS) thin film solar cells to promote the development of solar cells

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