Test method for measuring low-energy proton single-event upset sensibility of nanoscale device

Abstract

The invention relates to a test method for measuring the low-energy proton single-event upset sensibility of a nanoscale device. According to the method, the correlation of the direction of incident protons and the direction of the channel width of the device is considered; a proton incident direction as well as an angle selection method and determination principle are provided in a low-energy proton single-event test; a metal film coarse adjustment energy reduction and air layer fine adjustment energy reduction-combined proton energy selection and acquisition method is provided; the thickness of a metal film layer and the thickness of an energy reduction air layer are obtained; and therefore, energy required by the low-energy proton single-event test can be obtained, a component for astronavigation can be realized, low-energy proton single-event effect evaluation of high-integration and small-characteristic size deep submicron and nanoscale devices can be realized, and needs for satellite anti-radiation reinforcement design can be satisfied to the maximum extent. With the test method of the invention adopted, nanoscale devices can be selected for space projects, reference data can be provided for the application of reinforcement design, and reference data can be also provided for the research and development of anti-radiation reinforcement nanoscale devices.

Description

technical field [0001] The invention relates to a method for measuring the sensitivity of a low-energy proton single-particle flip test of a nano-device, and belongs to the technical field of anti-radiation of space components. Background technique [0002] The spacecraft operates in the space radiation environment, and the interaction between a single high-energy particle in space and the components used in the spacecraft electronic system may cause the single event effect of the components, which is one of the important factors that induce spacecraft failure. [0003] With the development of microelectronics technology, the feature size of the device has developed to the nanometer level, and the single event effect of the device is more sensitive. The LET value of proton direct ionization can reach up to 0.45MeV-cm 2 / mg, in theory, in the heavy ion accelerator irradiation test, less than 1MeV-cm for LET 2 / mg particles can still detect the single event phenomenon, then ...

AI Technical Summary

Problems solved by technology

The accepted patent "A Method for Device Proton Single Event Test Using Accelerator High-Energy Protons" has detailed regulations and methods for evaluating the single-event test procedures and methods caused by space high-energy protons, but the energy selection and acquisition method, incident direction and angle Elements of the low-energy proton single-particle test method, such as the selection method, are not described in detail.

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