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Method for smelting ferrosilicon by utilizing crystalline silicon scraps

A technology for crystalline silicon and waste, applied in the field of smelting ferrosilicon, to achieve the effects of low power consumption, high efficiency and reduced energy consumption

Active Publication Date: 2016-05-04
王先玉
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] Aiming at the existing problem of lacking a reasonable method for processing crystalline silicon cutting waste that can not only solve the problem of crystalline silicon waste, but also give full play to its own maximum characteristics, the present invention provides a method for smelting ferrosilicon by using crystalline silicon waste. It not only solves the problem of crystalline silicon waste disposal, but also maximizes the value of crystalline silicon waste

Method used

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  • Method for smelting ferrosilicon by utilizing crystalline silicon scraps
  • Method for smelting ferrosilicon by utilizing crystalline silicon scraps
  • Method for smelting ferrosilicon by utilizing crystalline silicon scraps

Examples

Experimental program
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Effect test

Embodiment 1

[0092] Such as figure 2 As shown, an intermediate frequency furnace includes a furnace body, and the furnace body is divided into three sections: the lower section 1 of the furnace body, the middle section 2 of the furnace body, and the upper section 3 of the furnace body from bottom to top; the diameter of the lower section 1 of the furnace body is 764 mm, and the height is 700 mm. The shape of the longitudinal section of the middle section 2 of the furnace body is an internally hollow rounded table shape, and the diameter of the lower end of the middle section 2 of the furnace body is equal to the diameter of the lower section 1 of the furnace body; the height of the middle section 2 of the furnace body is 700mm, and the angle between the side surface and the horizontal plane is 60° , the height of the upper section 3 of the furnace body is 1462mm, and the diameter of the upper end of the middle section 2 of the furnace body is equal to the diameter of the upper section 3 of...

Embodiment 2

[0100] Such as image 3 As shown, an intermediate frequency furnace is the same as Example 1, the difference is that the height of the lower section 1 of the furnace body is 600mm, and the volume of the lower section 1 of the furnace body accounts for 40% of the working section of the furnace body; it also includes a blowing gun 5, and the feed passes through The spray gun 5 is inserted downwards into the bottom of the lower section 1 of the furnace body through the top of the furnace body. Silicon powder waste is added using a blow gun 5 .

[0101] (A) 2500kg of low-carbon scrap steel required for smelting ferrosilicon alloy is loaded into the furnace, the heating coils in the lower section 1 of the furnace body and the middle section 2 of the furnace body are energized to melt the scrap steel into molten iron, and continue to heat the molten iron to within the range of 1590°C to 1630°C; The composition of silicon powder waste is: Si: 72%, Si-C: 16%, Fe: 2%, and the rest is ...

Embodiment 3

[0107] Such as figure 2 As shown, an intermediate frequency furnace includes a furnace body, and the furnace body is divided into three sections: the lower section 1 of the furnace body, the middle section 2 of the furnace body, and the upper section 3 of the furnace body from bottom to top; the diameter of the lower section 1 of the furnace body is 874 mm, and the height is 800 mm. The shape of the longitudinal section of the middle section 2 of the furnace body is an internally hollow rounded table shape, and the diameter of the lower end of the middle section 2 of the furnace body is equal to the diameter of the lower section 1 of the furnace body; the height of the middle section 2 of the furnace body is 700mm, and the angle between the side surface and the horizontal plane is 60° , the height of the upper section 3 of the furnace body is 2024mm, the diameter of the upper end of the middle section 2 of the furnace body is equal to the diameter of the upper section 3 of the...

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Abstract

The data of application of the invention is 2014-12-17, the application number is 2014107883956, and the original application name is: divisional application of a patent including an intermediate frequency furnace and application thereof as well as a method for smelting ferrosilicon by utilizing crystalline silicon scraps. The invention discloses a method for smelting ferrosilicon by utilizing crystalline silicon scraps and belongs to the field of crystalline silicon scrap treatment. The method for smelting ferrosilicon by utilizing crystalline silicon scraps comprises the steps of feeding steel scrap needed for smelting ferrosilicon into a furnace, then blowing silicon powder scrap, finally delivering a ferro-silicon alloy solution out of the furnace, carrying out vacuum decarburization and casting cooling, and then finishing the smelting process. According to the invention, carbon element in silicon carbide is used for reducing silicon dioxide, so that energy consumption is reduced; coke does not need to be added, so that influences of phosphorus element and sulfur element are reduced; and the product, namely, the ferrosilicon, is low-phosphorus low-sulfur low-carbon ferrosilicon and is high in value.

Description

[0001] The present invention is a divisional application of a patent with an application date of 2014-12-17, an application number of 2014107883956, and the original application name: an intermediate frequency furnace and its application and a method for smelting ferrosilicon by using crystalline silicon waste. technical field [0002] The invention belongs to the field of crystalline silicon waste treatment, in particular, relates to a method for smelting ferrosilicon by using crystalline silicon waste, more specifically, relates to a method for smelting ferrosilicon by using crystalline silicon waste produced in the production process of solar panels Methods. Background technique [0003] At present, with the development of clean energy, solar technology is developing rapidly. In the process of producing solar panels, a large amount of crystalline silicon is used. A silicon chip with a diameter of 75mm can integrate tens of thousands to hundreds of thousands or even millio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C33/04C22C35/00
CPCC22C33/04C22C35/005
Inventor 王先玉
Owner 王先玉
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