Failure analysis method for triode transistor

A crystal triode, failure analysis technology, applied in the field of failure analysis, can solve problems such as ignoring the internal gold wire structure and its connection, and having no practical guiding significance

Active Publication Date: 2016-04-20
贺州市八步区市场监督管理局
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

The existing failure analysis method of crystal triode is to analyze the cause through electrical testing, but this detection method often ignores the structure and connection of its internal gold wire, so it has no practical guiding significance

Method used

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  • Failure analysis method for triode transistor
  • Failure analysis method for triode transistor

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Embodiment Construction

[0019] The failure analysis method of a kind of crystal triode of the present invention, concrete steps are as follows:

[0020] Step 1: Observe the appearance of the crystal triode sample to be analyzed to confirm whether it is damaged or not;

[0021] Step 2: Carry out electrical testing on the crystal triode sample, and analyze the possible practical reasons;

[0022] Step 3: Carry out X-Ray perspective inspection on the transistor sample to confirm the internal structure of the transistor;

[0023] Step 4: pouring the outside of the crystal triode sample to be analyzed to make a metallographic section sample, the casting is pouring through epoxy resin;

[0024] Step 5: According to the internal structure of the crystal triode, the metallographic section sample is mechanically ground by a grinding and polishing machine, and the grinding includes: first grinding to a position close to the gold wire with 120-800 mesh emery paper, and then Observe under the metallographic mi...

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Abstract

The invention provides a failure analysis method for triode transistors, which includes the following steps: (A) performing visual inspection to triode transistor samples required to be analyzed to determine whether the samples are damaged or like or not; (B) performing electrical property detection to the triode transistor samples and analyzing possible failure reasons; (C) performing X-ray perspective detection to the triode transistor samples to determine the internal structures of the triode transistor samples; (D) preparing metallographic cross-section samples from the triode transistor samples and grinding the metallographic cross-section samples to the positions of gold wires one-by-one according to the internal structures of the triode transistor samples, and observing and analyzing the metallographic cross-section samples under a metallographic microscope; and (E) determining the failure reasons of the triode transistors with comprehensive consideration about the results in the above steps. Compared with the prior art, the method allows the structure and connection status of internal gold wires in the triode transistors to be observed, thereby finding the failure reasons of the triode transistors more deeply.

Description

【Technical field】 [0001] The invention relates to a failure analysis method, in particular to a failure analysis method of a crystal triode. 【Background technique】 [0002] The transistor is one of the most commonly used basic components. The function of the transistor is mainly to amplify the current. It is the core component of the electronic circuit. The basic component of the large-scale integrated circuit is the transistor. [0003] The basic structure of a crystal triode is to make two PN junctions that are very close to each other on a semiconductor substrate. The two PN junctions divide the whole semiconductor into three parts. The middle part is the base area, and the two sides are the emitter area and the collector area. There are two types of arrangement, PNP and NPN. The three regions are connected to each other by metal wires (gold wires or aluminum wires) and lead to corresponding electrodes, which are base b, emitter e, and collector c. The PN junction betwee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N33/00G01R31/26
Inventor 黄武
Owner 贺州市八步区市场监督管理局
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