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Resistance-type random access memory

A resistive random access memory technology, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of memory conductivity impact, deterioration, and affecting reset yield, etc., to inhibit the diffusion of oxygen ions and improve transparency. The effect of light rate

Active Publication Date: 2016-03-30
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the currently used titanium / hafnium oxide (Ti / HfO 2 ) type resistive random access memory, it is often difficult to maintain a low resistance state at high temperature, resulting in the deterioration of the so-called "high-temperature data retention (HTDR)"
[0003] Therefore, there are currently several technologies aimed at reducing the diffusion of oxygen ions into transition metal oxides, such as increasing the power of the set (Set), but this will affect the yield of the reset (Reset)
In addition, there is also a technique of using an extremely thin insulating oxide between the electrode and the transition metal oxide to block the diffusion of oxygen ions, but this method not only requires precise process control, but may also have an impact on the overall conductivity of the memory.

Method used

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Embodiment Construction

[0029] In order that the concept of the invention may be more fully appreciated, reference is made herein to the accompanying drawings, in which embodiments of the invention are shown. However, the invention may also be practiced in many different forms and should not be construed as limited to the embodiments set forth below. Rather, the embodiments are provided only so that the present invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0030] In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.

[0031] figure 1 is a schematic cross-sectional view of a resistive random access memory according to the first embodiment of the present invention.

[0032] exist figure 1 In the example, the RRAM on the substrate 100 includes a lower electrode 102 , an upper electrode 104 and a transition metal oxide (TMO) layer 106 between the upper electrode 104 and the lower ele...

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Abstract

The invention provides a resistance-type random access memory which comprises an upper electrode, a lower electrode and a transformation metal oxide layer between the upper electrode and the lower electrode. The resistance-type random access memory further comprises a metal cover layer arranged above the upper electrode and a transparent conductive oxide layer arranged between the metal cover layer and the upper electrode.

Description

technical field [0001] The present invention relates to a resistive random access memory (Resistive Random Access Memory, RRAM for short), and in particular to a resistive random access memory with a transparent conductive oxide layer. Background technique [0002] Resistive random access memory is generally composed of a top electrode (Top Electrode, referred to as TE), a bottom electrode (Bottom electrode, referred to as BE) and a transition metal oxide (TransitionMetalOxides, referred to as TMO) in between, and can be connected to The lower wire is connected out. Since the conductive path in the RRAM is controlled by oxygen vacancy (oxygenvacancy) to control the low resistance state (LRS), the diffusion of oxygen ions, which is easily affected by temperature, will become the heat of the RRAM. An important key to stable control. For example, the currently used titanium / hafnium oxide (Ti / HfO 2 ) type resistive random access memory, it is often difficult to maintain a low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L27/108H10B12/00
Inventor 张硕哲
Owner WINBOND ELECTRONICS CORP
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