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Dynamic random access memory and its manufacturing method

A technology of dynamic random access and manufacturing methods, applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve problems such as difficult readout margins, achieve the effect of improving readout margins and reducing leakage

Active Publication Date: 2018-07-27
WINBOND ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Judging from the current DRAM manufacturing process, because the distance between capacitors can no longer be reduced, it is not easy to improve the read margin by increasing the storage capacitor

Method used

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  • Dynamic random access memory and its manufacturing method
  • Dynamic random access memory and its manufacturing method
  • Dynamic random access memory and its manufacturing method

Examples

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Embodiment Construction

[0050] Figure 1A is a top view of a DRAM according to the first embodiment of the present invention. Figure 1B yes Figure 1A The cross-sectional schematic diagram of the I-I' line segment. Figure 1C yes Figure 1A A schematic cross-sectional view of the II-II' line segment.

[0051] Please also refer to Figure 1A , 1B Compared with 1C, the DRAM of this embodiment includes a silicon substrate 100, a first isolation trench structure 102, a second isolation trench structure 104, an active region 106, a buried word line 108 located in the silicon substrate 100, and a Buried bit lines 110 and capacitors 112 in the silicon substrate 100 . In order to clearly illustrate the circuit of the dynamic random access memory, Figure 1A Only the above components are shown in , other structures are visible Figure 1B and Figure 1C sectional view.

[0052] In the first embodiment, the first isolation trench structures 102 are arranged in parallel in the silicon substrate 100 along t...

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Abstract

A dynamic random access memory and a manufacturing method thereof. The dynamic random access memory includes a silicon substrate, a first isolation trench structure, a second isolation trench structure, an active area defined by the first and second isolation trench structures, located at Buried word lines in the silicon substrate, buried bit lines and capacitors in the silicon substrate. Two buried word lines are disposed between two second isolation trench structures to divide the active area into a bit line contact window and two capacitor contact windows located between the two buried word lines. The buried bit line is located above the buried word line and is electrically connected to the bit line contact window in the active area. The capacitor is arranged on the active area and is electrically connected to the capacitor contact window. There is also an oxide liner between the buried bit line and the silicon substrate. The present invention can improve the read margin of DRAM.

Description

technical field [0001] The present invention relates to a dynamic random access memory technology, and in particular to a dynamic random access memory and a manufacturing method thereof. Background technique [0002] The dynamic random access memory (DRAM) faces more and more difficulties after the development of the device into the nanometer era, for example, the sensing margin becomes smaller. Currently, there are three key technologies for improving the read margin, including larger storage capacitance, smaller capacitance between bit lines (BL capacitance, Cb) and smaller noise. According to the current DRAM manufacturing process, since the distance between the capacitors can no longer be reduced, it is not easy to improve the read margin by increasing the storage capacitor. [0003] Therefore, there is an urgent need to find other ways to improve the readout margin of DRAM after the nanometer era. Contents of the invention [0004] The invention provides a dynamic r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
Inventor 田中义典江明崇
Owner WINBOND ELECTRONICS CORP
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