Forming method of tungsten electrode

Abstract

The invention provides a forming method of a tungsten electrode. The method comprises the steps of: forming a first opening in a semiconductor substrate, forming a tungsten layer respectively on the side wall and the bottom part of the first opening and the surface of the semiconductor substrate, then removing the tungsten layer on the surface of the semiconductor substrate, and at least reserving a part of tungsten layer on the bottom part of the first opening; and then using the residual tungsten layer in the first opening as a core layer, and continuously forming tungsten to fill the first opening. After tungsten on the surface of the first opening is removed, tungsten cannot be formed on the surface of the semiconductor surface in the tungsten forming process with the residual tungsten layer in the first opening used as the core layer, so that the first opening is prevented from being blocked by tungsten on the surface of the semiconductor substrate, and the problem that reaction gas fails to enter the first opening is solved, the number and size of gaps in tungsten formed in the opening are further reduced, and the performance of the tungsten electrode is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a tungsten electrode. Background technique [0002] With the rapid development of integrated circuit (abbreviated as IC) manufacturing technology, the process nodes of traditional integrated circuits are gradually reduced, and the size of integrated circuit devices is continuously reduced. On a wafer, the number of semiconductor components is continuously increased. Processes are constantly being innovated to improve the performance of integrated circuit devices. [0003] For example, in order to meet the requirements of increasing the number of semiconductor elements, a wafer often includes semiconductor elements with a multi-layer structure, and the semiconductor elements of adjacent layers are electrically connected through a metal interconnection structure, thereby increasing the number of semiconductor elements on a chip with a specific area. ...

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Problems solved by technology

But in practice, refer to Figure 4 , because the aspect ratio of the opening 19 is still relatively large, when the opening 19 is filled with tungsten 142, a void 181 will still be formed, so the performance of the formed tungsten electrode still cannot meet the ever-increasing development requirements of semiconductor devices

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