Silicon gate graphene/black phosphorus transistor and preparation method

Abstract

The present invention discloses a silicon gate graphene / black phosphorus transistor and a preparation method, and relates to a semiconductor device technology. The transistor disclosed by the present invention comprises a substrate, a gate electrode, a gate dielectric, a source electrode and a drain electrode, and is characterized in that: a silicon oxide isolation layer is arranged on the substrate, a silicon oxide groove is disposed on the silicon oxide isolation layer, the gate electrode and the gate dielectric are disposed inside the silicon oxide groove, a graphene / black phosphorus layer is disposed on the surface of the substrate, and the source electrode and the drain electrode are disposed above the graphene / black phosphorus layer. The silicon gate graphene / black phosphorus transistor and the preparation method have the advantages that: 1, the method is easy to control, is good in process repeatability, and is compatible with a conventional semiconductor silicon process; 2, high gate dielectric quality is easily obtained; 3, filling of a relatively narrow groove is easy to achieve; 4, application potential of large scale integration is realized; and 5, performance of a graphene / black phosphorus film is ensured to the maximum extent.

Description

technical field [0001] The present invention relates to semiconductor device technology. Background technique [0002] Since the development of silicon integrated circuit technology, trillions of dollars in equipment and technology investment around the world have made integrated circuit technology a very strong industrial capability. At the same time, long-term scientific research investment has enabled people to have a very deep and thorough understanding of the various properties of silicon and its derivatives, making it the most of more than 100 elements in nature. This is a very valuable accumulation of knowledge. [0003] In recent years, technologies such as 4th generation mobile communication, mobile communication mobile phones, high-speed wireless Internet, Bluetooth, and satellite TV services using MPGE standard to realize wireless video and image transmission have surged, and wireless communication technology has developed by leaps and bounds. The huge demand of ...

AI Technical Summary

Problems solved by technology

The main disadvantage of forming a graphene transistor structure in this way is that it is not compatible with the traditional CMOS process and is not conducive to integration with semiconductor devices. It will encounter greater difficulties when using traditional material deposition methods to fill materials into narrow substrate trenches.

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