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Chemical vapor deposition equipment and method for preparing graphene film

A chemical vapor deposition and graphene film technology, applied in the field of chemical vapor deposition equipment and the preparation of graphene films by using the equipment, can solve the problems of increasing equipment costs, potential safety hazards, etc., and achieve increased safety, cost savings in preparation and safety management Effect

Inactive Publication Date: 2016-03-16
李雪松
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this method, both hydrocarbon gas and hydrogen are flammable and explosive gases. Special safety control is required for the use of these gases, which not only increases the cost of equipment, but also poses a greater safety hazard

Method used

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  • Chemical vapor deposition equipment and method for preparing graphene film
  • Chemical vapor deposition equipment and method for preparing graphene film

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Embodiment 1

[0020] see figure 1 . The chemical vapor deposition equipment for preparing graphene film includes: gas conversion reaction chamber 112 and heating device 110 for heating gas conversion reaction chamber 112, graphene film growth reaction chamber 122 and for heating graphene film growth reaction chamber The heating device 120 , the intake air management system 200 , the vacuum system 300 and the graphite rod 114 placed in the gas conversion reaction chamber 112 .

[0021] One end of the gas conversion reaction chamber 112 is sealed and connected to the intake management system 200 through the air inlet 116, and the other end of the graphene film growth reaction chamber 122 is sealed and connected to the vacuum system 300 through the gas outlet port 126. , the gas conversion reaction chamber 112 and the graphene film growth reaction chamber 122 are directly communicated by using a quartz tube 100 . The diameter of the quartz tube 100 is 5 cm to 50 cm.

[0022] The graphite ro...

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Abstract

The invention discloses chemical vapor deposition equipment for preparing a graphene film. The equipment comprises an incoming gas management system, a gas conversion chamber, a graphene film growing chamber, a vacuum system and a graphite rod arranged in the gas conversion chamber which are in sequential and sealed series connection, wherein a gap between the graphite rod and the inner wall of the gas conversion chamber is 0.5-2mm. According to the equipment disclosed by the invention, with the graphite rod in the gas conversion chamber, the non-flammable and non-explosive gases such as carbon dioxide gas are reduced into carbon monoxide gas which can grow into a graphene film at high temperature; and after that, a graphene film is deposited and grown on a metal substrate in the graphene film growing chamber. In the invention, the non-flammable and non-explosive gases are adopted as the reaction gas and carrier gas for graphene film preparation; and compared with the existing graphene film preparation method adopting flammable and explosive hydrocarbon and hydrogen as the reaction gas and carrier gas, the safety of the technology is remarkably improved, the production cost is reduced, and large-scale production can be realized.

Description

technical field [0001] The invention relates to the technical field of thin film material preparation, in particular to a chemical vapor deposition device for preparing graphene thin films and a method for preparing graphene thin films using the device. Background technique [0002] Graphene is a two-dimensional carbon material whose lattice is a hexagon surrounded by six carbon atoms and is one atomic layer thick. The carbon atoms are connected by s bonds, and the combination method is sp2 hybridization. Graphene has good mechanical, optical, electrical, thermal properties and other characteristics, and has broad application prospects. It is considered to be the most amazing material in the 21st century and can be widely used in electronics, optoelectronics, energy, biology, etc. field. [0003] Graphene can be prepared in a variety of ways. Among them, the most widely used and considered the most promising preparation method is the preparation by chemical vapor depositi...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 李雪松
Owner 李雪松
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