A metal-doped amorphous carbon thin film temperature sensing element and its preparation method

A technology of sensing elements and metal doping, applied in thermometers, thermometers with directly heat-sensitive electric/magnetic elements, instruments, etc., can solve the problem of not having high TCR, high room temperature resistivity, poor adhesion, etc. at the same time question

Active Publication Date: 2018-01-30
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the deposition conditions of diamond film are harsh, there are great restrictions on the substrate material, and the adhesion is poor, which also limits the application range of diamond film temperature sensor to a large extent.
[0008] Diamond-like carbon film, the English name is Diamond like carbon, referred to as DLC, is a general term for a type of amorphous carbon film, has excellent chemical and mechanical stability, its preparation process is compatible with microelectronics technology, and is used as NTC (Negative Temperature Coefficient), that is, a conductive material with a negative temperature coefficient, has a high TCR value, reaching thousands of ppmK -1 , but at the same time DLC has high room temperature resistivity, which brings great disadvantages to component integration
[0009] Therefore, when metals, traditional Si-based thin films, and traditional amorphous carbon thin films are used as thin-film temperature sensing materials, they cannot simultaneously meet the requirements of high TCR, appropriate room temperature resistance, and certain friction and corrosion protection. Therefore, it is necessary to develop new thin-film temperature sensing materials. Sensing Materials and Temperature Sensing Elements

Method used

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  • A metal-doped amorphous carbon thin film temperature sensing element and its preparation method
  • A metal-doped amorphous carbon thin film temperature sensing element and its preparation method
  • A metal-doped amorphous carbon thin film temperature sensing element and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0041] In this embodiment, the structure of the temperature sensing element is as follows figure 1 shown by Al 2 o 3 Composed of substrate 1, tungsten-doped amorphous carbon film 2 and silver colloidal electrode 3, tungsten-doped amorphous carbon film 2 is located on Al 2 o 3 On the surface of the substrate 1 , the silver glue electrode 3 is located on the surface of the tungsten-doped amorphous carbon film 2 .

[0042] Tungsten-doped amorphous carbon film 2 composed of C diamond phase sp 3 and graphite phase sp 2 Hybrid state, tungsten atoms and / or tungsten carbides, and H atoms, where tungsten atoms and / or tungsten carbides are distributed in sp 2 covalent bond and sp 3 The irregular carbon space network matrix structure formed by covalent bonds.

[0043] The preparation method of the temperature sensing element comprises the following steps:

[0044] (1)Al 2 o 3 The substrate was ultrasonically cleaned with ethanol, dried and placed in a vacuum chamber, pre-evacua...

Embodiment 2

[0052] In this embodiment, the structure of the temperature sensing element is completely the same as that in Embodiment 1.

[0053] In this embodiment, the preparation method of the temperature sensing element is basically the same as that in Embodiment 1, except that the magnetron sputtering target current in step (2) is 1.8A.

[0054] Same as in Example 1, using the four-point method, the relationship between the resistivity of the above-mentioned prepared temperature sensing element in the range of 278K to 368K as a function of temperature was tested by a comprehensive physical property measurement system (Physical PropertyMeasurement System, PPMS), and the results are as follows image 3 As shown, through the following formula:

[0055]

[0056] R0 is the resistance value at the initial temperature T0, R is the film resistance value at the temperature T, and the TCR value can be obtained to be about 235ppmK -1 .

Embodiment 3

[0058] In this embodiment, the structure of the temperature sensing element is as follows figure 1 shown by Al 2 o 3 Composed of substrate 1, copper-chromium co-doped amorphous carbon film 2 and silver glue electrode 3, copper-chromium co-doped amorphous carbon film 2 is located on Al 2 o 3 On the surface of the substrate 1, the silver glue electrode 3 is located on the surface of the copper-chromium co-doped amorphous carbon film 2.

[0059] CuCr-doped amorphous carbon film 2 composed of C diamond phase sp 3 and graphite phase sp 2 Hybrid state, copper, chromium atoms and / or copper chromium carbides, and H atoms, where copper chromium atoms and / or copper chromium carbides are distributed in sp 2 covalent bond and sp 3 The irregular carbon space network matrix structure formed by covalent bonds.

[0060] The preparation method of the temperature sensing element comprises the following steps:

[0061] (1)Al 2 o 3 The substrate was ultrasonically cleaned with ethanol, ...

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Abstract

The invention provides a metal-doped amorphous carbon film temperature sensing element. The temperature sensing element is composed of a substrate, a metal-doped amorphous carbon film and an electrode. The metal-doped amorphous carbon film is located on the surface of the substrate, and the electrode is located on the surface of the metal-doped amorphous carbon film. Compared with the existing temperature sensing element, the TCR value and resistivity of the thin-film temperature sensing element can be adjusted, and it can have high TCR value and excellent mechanical properties and tribological properties at the same time, which can realize the temperature sensing element in harsh environments. in the application.

Description

technical field [0001] The invention belongs to the field of thin-film temperature sensors, in particular to a metal-doped amorphous carbon thin-film temperature sensing element and a preparation method thereof. Background technique [0002] In the 20th century, with the development of integrated circuit technology and Micro Electro Mechanical Systems (MEMS for short), the development of various sensors has entered a new stage. Among them, temperature sensors play a special role in modern information technology and are currently the most widely used type of sensors. [0003] Thin-film temperature sensor is a new type of micro-sensor developed with the maturity of thin-film technology. Compared with bulk temperature sensors, the sensitive element of thin-film temperature sensor is a μm-level thin film, which has the characteristics of small size and short thermal response time. , can accurately measure transient temperature changes, and this sensor has high precision, is eas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K7/18C23C14/35
Inventor 汪爱英郭鹏柯培玲张栋陈仁德郑贺
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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