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A ratiometric temperature sensor based on double-doped quantum dots

A ratio temperature, quantum dot technology, applied in the field of temperature sensors, can solve problems such as changing luminescence performance and temperature sensor failure

Active Publication Date: 2021-02-23
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(2) The luminescence of the surface state is greatly affected by the temperature and the environment. The most important thing is that the high temperature during the test can degrade the surface properties of the quantum dots and change the luminescence performance of the surface state, resulting in direct failure of the temperature sensor.
But so far, there has been no report on the use of green and environmentally friendly Cd-free double-doped quantum dots to build a ratiometric temperature sensor.

Method used

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  • A ratiometric temperature sensor based on double-doped quantum dots
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Weigh CuCl (0.01mmol), Mn (OAc) in turn 2 (0.001mmol), In(Ac) 3 (0.2mmol), Zn(Ac) 2 (0.2mmol), DDT (1mL), OLA (1mL) and ODE (5mL) were added to a 100mL three-necked flask. The high-purity argon atmosphere (oxygen-free, the same below) in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 100°C for 20 minutes to remove residual water molecules and low-boiling organic matter, and obtain a transparent solution. Then the temperature was raised to 220°C. The sulfur (S) precursor solution (containing 19mg, 0.6mmol S, 1mL ODE and 1mL oleylamine (OLA)) was quickly injected into the three-neck flask, and the growth was maintained at the injection temperature for 20min. At this temperature, 2mL of the zinc precursor solution (containing 0.2mmol zinc acetate (Zn(Ac) 2 ) and 1mL ODE, 1mLOLA) were quickly added to the reaction solution, the temperature was raised to 230°C and kept growing for 20min, and then th...

Embodiment 2

[0034] Weigh CuCl (0.017mmol), Mn (OAc) in turn 2 (0.033mmol), In(Ac) 3 (0.067mmol), Zn(Ac) 2 (0.2mmol), the molar ratio of indium salt to zinc salt is about 1 / 3, DDT (1mL), OLA (1mL) and ODE (5mL) are added in the 100mL three-necked flask. The high-purity argon atmosphere in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 95°C for 38 minutes to remove residual water molecules and low-boiling organic matter, and obtain a transparent solution. Then the temperature was raised to 200°C. The sulfur (S) precursor solution (containing 0.1mmol S, 1mL ODE and 1mL oleylamine (OLA)) was quickly injected into the three-neck flask, and the growth was maintained at the injection temperature for 35min. At this temperature, 2mL of the zinc precursor solution ( Contains 0.1mmol zinc acetate (Zn(Ac) 2 ) and 1mL ODE, 1mL OLA) were quickly added to the reaction solution, the temperature was raised to 243°C and kept growi...

Embodiment 3

[0036] Weigh CuCl (0.1mmol), Mn (OAc) in turn 2 (0.062mmol), In(Ac) 3 (0.1mmol), Zn(Ac) 2 (0.2mmol), DDT (1mL), OLA (1mL) and ODE (5mL) were added to a 100mL three-necked flask. The high-purity argon atmosphere in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 98°C for 35 minutes to remove residual water molecules and low-boiling organic matter, and obtain a transparent solution. Then the temperature was raised to 240°C. The sulfur (S) precursor solution (containing 1.2mmol S, 1mLODE and 1mL oleylamine (OLA)) was quickly injected into the three-neck flask, and the growth was maintained at the injection temperature for 23min. At this temperature, 2mL of the zinc precursor solution (containing 0.8mmol zinc acetate (Zn(Ac) 2 ) and 1mL ODE, 1mL OLA) were quickly added to the reaction solution, the temperature was raised to 226°C and kept growing for 30min, and then cooled to 124°C. Cu, Mn co-doped Zn-In-...

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Abstract

The ratio temperature sensor based on double-doped quantum dots disclosed by the present invention includes a semiconductor sensitive element provided with a double-doped quantum dot material. The preparation method of the double-doped quantum dot material is as follows: a. Sulfur precursor and zinc precursor Preparation; b. Add dopants, matrix materials and surface ligands to the ODE solvent, heat up under anaerobic conditions to remove impurities and water to obtain a transparent solution, and the surface ligands are DDT and OLA; heat up the transparent solution, add sulfur Precursor, adding zinc precursor to insulation growth to obtain a solution containing Cu(Ag) and Mn co-doped with Zn-In-S quantum dots; the solution is cooled and purified to obtain quantum dots. The sensor of the present invention has high sensitivity, large test range and good stability, and can realize the regulation and control of double fluorescence emission intensity by regulating the doping concentration of double doping ions, and has outstanding performance.

Description

technical field [0001] The invention relates to a temperature sensor, in particular to a ratio temperature sensor based on double-doped quantum dots. Background technique [0002] Temperature is one of the most basic physical parameters of matter and plays a vital role in physical, chemical and physiological processes. In the industrial production and manufacturing process, real-time monitoring of temperature can optimize the production process, reduce waste and reduce energy consumption; in the fields of bioengineering and biochemistry, subtle differences in temperature can indicate the living state of cells. Therefore, real-time and accurate monitoring of temperature has played an important role in industrial production and biomedical diagnosis and treatment. [0003] Semiconductor quantum dots have important application prospects in temperature sensing due to their excellent optical properties and flexible surface modification methods. According to a large number of lit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K11/20G01K11/32
Inventor 曹盛郑金桔高凤梅尚明辉杨祚宝杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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