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Monolithic Integrated External Cavity Oscillator Laser with Fast Wavelength Tuning

A single-chip integration and laser technology, which is applied to the device for controlling the output parameters of the laser, the structure of the optical resonator, etc., can solve the problems of narrow bandwidth of the adjustable laser, difficulty of single-chip integration, and inability to achieve high-speed switching of wavelengths. Integrated, fast frequency switching rate, wide tuning range effects

Active Publication Date: 2018-01-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of this, the present invention aims to solve the problem that traditional tunable lasers have narrow bandwidth and are difficult to monolithically integrate, and the existing monolithic integration schemes and tuning methods cannot achieve high-speed switching of wavelengths. It is proposed to combine microrings and Mach- Zönder interference structure, using electro-optic tuning, coupled into the gain region, provides a monolithic integrated external cavity oscillator laser with fast wavelength tuning

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  • Monolithic Integrated External Cavity Oscillator Laser with Fast Wavelength Tuning
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  • Monolithic Integrated External Cavity Oscillator Laser with Fast Wavelength Tuning

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specific Embodiment

[0035] Specific embodiment: monolithic integrated wavelength fast tuned external cavity oscillator laser

[0036] The laser is composed of a gain region and an external cavity oscillation region. The external cavity oscillation region is composed of a silicon nanowire device based on silicon insulator material (SOI). The thickness of the top layer of silicon is 340nm, and the refractive index of the material is 3.4744; The semiconductor optical amplifier chip made of materials is bonded on the SOI chip by thermocompression welding technology, and then coupled with the silicon waveguide through the mode converter and the silicon waveguide; One of the cavity mirrors is used, the reflectivity is greater than 99%.

[0037] as attached Figure 4 And attached Figure 5 They are two example structures of monolithic integrated wavelength fast-tuned external cavity oscillator lasers, which are "round-trip structure" and "circular structure". The following will analyze the lasers of ...

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Abstract

The invention discloses a single-chip integrated external cavity oscillator laser with fast wavelength tuning. The laser includes a gain region, a frequency tuning region and a resonant cavity; the gain region is an optical amplifier, and the optical coupling of the frequency tuning region can be through a bonding material , grating alignment, mode speckle converter or waveguide direct alignment, etc.; the frequency tuning area contains several microrings and Mach-Zehnder interference structures, using the carrier dispersion effect of semiconductor materials in Mach-Zehnder interference structures Or the electro-optic effect realizes fast switching of the resonant frequency, and at the same time uses the thermo-optic effect of the microring to realize the stability of the resonant frequency; the resonant cavity is composed of one end of the gain region and the frequency tuning region. Compared with previous tunable lasers, this design scheme has a wide tuning range and a frequency switching time lower than microseconds, and is more conducive to integration in structure.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology and planar optical waveguide integration, and relates to a structure of an external cavity oscillation laser with fast adjustable wavelength. Background technique [0002] In recent years, in order to break through the limitation of "electronic bottleneck", photon has been widely regarded as a new information carrier. In the field of long-distance communication, optical communication has achieved great success with the advantages of high bandwidth and low loss; with the development of technology, optical communication will develop towards higher integration density and shorter transmission distance, that is, the scale of optical devices and monolithic integration. Due to the advantages of silicon materials such as large wafer area and CMOS process compatibility, the scheme of using silicon waveguide system to realize integrated optics has attracted more and more attention. At present, a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14H01S5/06
Inventor 叶彤储涛付云飞唐伟杰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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