Vertical current regulative diode and manufacturing method thereof

A constant current diode, vertical technology, applied in semiconductor/solid state device manufacturing, electrical components, circuits, etc., can solve the problems of high voltage and low saturation, and achieve low pinch-off voltage, good constant current characteristics, and working voltage. wide range of effects

Inactive Publication Date: 2015-12-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this patent uses many structures to improve device performance, the current increases significantly with the increase of voltage, that is, the saturation is not high. In addition, the device requires a large voltage to reach the saturation current.

Method used

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  • Vertical current regulative diode and manufacturing method thereof
  • Vertical current regulative diode and manufacturing method thereof
  • Vertical current regulative diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] like figure 2 As shown, a vertical constant current diode in this example includes an oxide layer 7, a highly doped N-type epitaxial layer 6, a lightly doped N-type epitaxial layer 2, and a heavily doped N+ liner stacked sequentially from top to bottom. Bottom 1 and metal anode 8; the diode has a cell structure, a terminal structure and a stop ring in sequence along the lateral direction of the device, and the cell structure is composed of a plurality of cells with the same structure and connected in sequence; the cells include the first A metal cathode 3, a second metal cathode 18, a first N+ heavily doped region 4 and a first P+ heavily doped diffusion region 5; the first P+ heavily doped diffusion region 5 is located at both ends of the cell structure, and the first A P+ heavily doped diffusion region 5 runs through the highly doped N-type epitaxial layer 6 and extends into the lightly doped N-type epitaxial layer 2; the first N+ heavily doped region 4 and the first...

Embodiment 2

[0048] like image 3 As shown, this example is based on Example 1, when the concentrations of the highly doped N-type epitaxial layer 6 and the lightly doped N-type epitaxial layer 2 are the same. The advantage of this example is that the same concentration can save manufacturing costs. However, because there is only one epitaxial layer with a low doping concentration, the resistance of the channel region is small, the pinch-off point changes quickly, and the current of the device is unstable in the constant current region.

Embodiment 3

[0050] like Figure 4 As shown, in this example, on the basis of Example 1, the lower part of the P well 14 extends into the lightly doped N-type epitaxial layer 2. Compared with Example 1, the well of this example is higher and the well resistance is smaller, which can Use the upper layout to adjust the resistor value more precisely.

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PUM

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Abstract

The invention relates to semiconductor technologies, in particular to a vertical current regulative diode and a manufacturing method thereof. The vertical current regulative diode comprises an oxide layer, a highly-doped N-type epitaxial layer, a lightly-doped N-type epitaxial layer, a heavily-doped N+ substrate and a metal anode which are sequentially arranged in a stacked mode. The vertical current regulative diode is characterized in that a resistor is additionally arranged to serve as a negative feedback structure. The vertical current regulative diode has the advantages that because the introduced resistor has a certain voltage drop when a device works, a channel can be pinched off more easily, the vertical current regulative diode can enter a constant current area rapidly, the breakdown voltage of the lateral current regulative diode is effectively increased, the lateral current regulative diode has a low pinch-off voltage, the constant current of the lateral current regulative diode is effectively increased, and the effective operating voltage range of the lateral current regulative diode is effectively widened. The method is especially suitable for the lateral current regulative diode.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a vertical constant current diode and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source protects the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. In recent years, a constant current diode CRD (Current Regulator Diodes) has appeared on the market, that is, diodes are used as constant current sources to replace transistors, Zener tubes, resistors and other components of ordinary constant current sources. Constant current diodes have a large output current and have been made To a constant current from several milliamps to tens of milliamperes, it can directly drive the load, simplify the circuit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329
CPCH01L29/861H01L29/6609
Inventor 乔明张康代刚于亮亮何逸涛张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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