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Ce<1-x>Zr<x>O2 buffer layer and preparation method thereof

The technology of buffer layer and precursor liquid is applied in the field of high-temperature superconducting material preparation, and achieves the effects of low cost of raw materials, simple preparation process and wide source.

Active Publication Date: 2015-12-09
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Another object of the present invention is to provide the preparation method of the above-mentioned buffer layer, which solves the problem that the existing preparation technology needs to be carried out in a vacuum environment

Method used

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  • Ce&lt;1-x&gt;Zr&lt;x&gt;O2 buffer layer and preparation method thereof
  • Ce&lt;1-x&gt;Zr&lt;x&gt;O2 buffer layer and preparation method thereof
  • Ce&lt;1-x&gt;Zr&lt;x&gt;O2 buffer layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Ce 0.7 Zr 0.3 o 2 Preparation of the buffer layer:

[0035] Get x to be 0.3, cerium nitrate hexahydrate and zirconium oxychloride octahydrate are dissolved in the solvent according to the mol ratio of Ce: Zr=0.7:0.3, and solvent is anhydrous methanol; Calculate according to the total moles of metal ions, adjust The amount of solvent added to obtain a precursor solution with a metal ion concentration of 0.1mol / L; the prepared precursor solution was coated on a NiW metal substrate by dip coating, and then the NiW metal substrate coated with the precursor solution was coated on a muffle The furnace was pretreated at 150 °C for 10 min; the treated precursor solution was put into a quartz tube sintering furnace for heat treatment, and under the protection of a reducing atmosphere, the temperature in the furnace was raised to 300 °C at a heating rate of 3 °C / min. Insulation for 8 minutes, wherein the reducing atmosphere is 96% Ar and 4% H by volume fraction 2The mixed gas...

Embodiment 2

[0039] Ce 0.8 Zr 0.2 o 2 Preparation of the buffer layer:

[0040] Get x to be 0.2, cerium nitrate hexahydrate and zirconium oxychloride octahydrate are dissolved in the solvent according to the mol ratio of Ce: Zr=0.8:0.2, and solvent is the mixed solution of ethylene glycol methyl ether and methyl alcohol; Calculate the total number of moles, adjust the amount of solvent added, and obtain a precursor solution with a metal ion concentration of 0.3mol / L; use the dip coating method to coat the prepared precursor solution on the NiW metal substrate, and then apply the precursor solution coated with The NiW metal substrate was pretreated in a muffle furnace at 180°C for 13 minutes; the treated precursor liquid was put into a quartz tube sintering furnace for heat treatment, and the temperature in the furnace was increased at a heating rate of 5°C / min under the protection of a reducing atmosphere. Raise to 300°C and hold for 9 minutes, wherein the reducing atmosphere is 96% Ar ...

Embodiment 3

[0044] Ce 0.9 Zr 0.1 o 2 Preparation of the buffer layer:

[0045] Get x to be 0.1, cerium nitrate hexahydrate and zirconium oxychloride octahydrate are dissolved in the solvent according to the mol ratio of Ce: Zr=0.9: 0.1, and solvent is in the mixed solvent of methyl alcohol, ethylene glycol methyl ether and acetylacetone, Wherein methyl alcohol: ethylene glycol methyl ether: the mass ratio of acetylacetone is 9:4:1; Calculate according to the total moles of metal ions, adjust the add-on of solvent, obtain the precursor solution that metal ion concentration is 0.4mol / L; Adopt The prepared precursor solution is coated on the NiW metal substrate by the dip coating method, and then the NiW metal substrate coated with the precursor solution is pretreated in a muffle furnace at 200°C for 15 minutes; the processed precursor solution is put into a quartz tube Carry out heat treatment in a sintering furnace. Under the protection of a reducing atmosphere, the temperature in the f...

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Abstract

The invention discloses a Ce<1-x>Zr<x>O2 buffer layer of which the chemical composition is Ce<1-x>Zr<x>O2. The buffer layer is prepared through extension phase forming thermal treatment, wherein 0.1 <= x <= 0.3. The invention also discloses a preparation method of the buffer layer, comprising the following steps: (1) dissolving Ce(NO3)3.6H2O and ZrOCl2.8H2O in a solvent according to the molar ratio of Ce:Zr=(1-x):x, and regulating the addition quantity of the solvent according to the total mole number of metal ions to obtain a precursor solution being 0.1-0.6 mol / L in metal ion concentration; and (2) coating a NiW metal base bar by the precursor solution and performing thermal treatment to prepare the Ce<1-x>Zr<x>O2 buffer layer. The invention provides a template for growing a superconductive layer YBCO, and furthermore, a series of new oxides Ce<1-x>Zr<x>O2 substitutional solid solution is obtained. The method is low in raw material cost, is wide in raw material source, is simple in process and is beneficial to industrial large-scale production.

Description

technical field [0001] The invention belongs to the technical field of preparation of high-temperature superconducting materials, and relates to a Ce 1-x Zr x o 2 The buffer layer, the present invention also relates to the preparation method of the above buffer layer. Background technique [0002] The second-generation high-temperature superconducting coated conductor has become a hot spot in the research of high-temperature superconducting materials because of its high critical current density and excellent high-magnetic field performance. The coated conductor is mainly composed of four parts: substrate, buffer layer, superconducting layer and protective layer. Among them, the role of the buffer layer is to reduce the gap between the metal substrate and the high-temperature superconducting layer YBa. 2 Cu 3 o 7-x (namely YBCO) lattice mismatch between, to achieve texture transfer; at the same time block the chemical reaction and diffusion between the metal substrate a...

Claims

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Application Information

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IPC IPC(8): C04B35/48C04B35/622
Inventor 雷黎王莎莎赵高扬
Owner XIAN UNIV OF TECH
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