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Novel SiC film preparing process

A thin film preparation and process technology, applied in the field of new SiC thin film preparation technology, can solve the problems of inability to eliminate micro-pipe defects, difficult doping, expensive SiC bulk single crystal, etc., to increase the structure and chemical order, and eliminate residual stress. Effect

Inactive Publication Date: 2015-11-25
鞠云
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Problems solved by technology

However, SiC bulk single whiskers grow at high temperature, doping is difficult to control, there are defects in the crystal, especially micropipe defects cannot be eliminated, and SiC bulk single crystals are very expensive, so the development of low-temperature preparation of SiC thin film technology is for the practical application of SiC devices of great significance

Method used

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Embodiment Construction

[0011] In the experiment, a graphite sheet was used as the substrate material with a purity of 99.99% and a size of 20mm×10mm×2mm. Before the experiment, the graphite substrate was polished and pretreated, and then cleaned. The process is as follows:

[0012] (1) Grind the surface of the graphite sheet with #1-#6 sandpaper to keep the surface smooth;

[0013] (2) Put the polished sample into 30% nitric acid for 10 minutes to remove impurities on the surface;

[0014] (3) Take out the sample and wash it in acetone for 10 minutes to remove the oil stain on the surface;

[0015] (4) Take out the sample and wash it in ethanol for another 10 minutes to dissolve the organic matter on the surface;

[0016] (5) The treated samples were washed in deionized water, washed to neutrality, and then taken out to dry for use.

[0017] A new type of SiC thin film preparation process includes the following steps: using resistive thermal evaporation equipment to evaporate silicon particles on...

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Abstract

The invention discloses a novel SiC film preparing process. The novel SiC film preparing process is characterized in that the process includes the following steps that a resistance-type thermal evaporation device is adopted, silicon particles are evaporated on a graphite substrate, atoms or molecules of the silicon particles can be gasified from the surface under the vacuum condition, a silicon steam flow is formed and enters the graphite substrate with the lower temperature in an incidence manner, and a solid Si film is formed to be annealed in an annealing furnace.

Description

technical field [0001] The invention relates to a thin film preparation process, in particular to a novel SiC thin film preparation process. Background technique [0002] SiC is composed of Si atoms and C atoms, and its crystal structure is characterized by homogeneous polytypes. The most common ones in the semiconductor field are 3C-SiC with cubic sphalerite structure and 4H-SiC and 6H with hexagonal wurtzite structure. -SiC. Since the 21st century, the micro-electromechanical system (MEMS) with Si as the basic material has made great progress. With the continuous expansion of MEMS application fields, the performance limitations of the Si material itself restrict the performance of Si-based MEMS at high temperature, high frequency and high strength. Applications under extreme conditions such as radiation and chemical corrosion. Therefore, the search for new alternative materials for Si is receiving increasing attention. Among many semiconductor materials, SiC has obvious...

Claims

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Application Information

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IPC IPC(8): C23C14/58C23C14/18C23C14/26C23C14/35C23C14/06
Inventor 鞠云樊磊
Owner 鞠云
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