A chip bonding method and ultrasonic indenter design for rapid generation of high melting point joints

A chip bonding and high melting point technology, applied in the field of materials, can solve problems such as device damage and chip cracking, and achieve the effects of enhancing wettability, improving production efficiency, and reducing production costs

Active Publication Date: 2018-03-13
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If this technology is used in chip bonding, the vibration indenter directly acts on the chip, and the chip will be broken due to high-frequency vibration and pressure, and the device will be damaged.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A chip bonding method and ultrasonic indenter design for rapid generation of high melting point joints
  • A chip bonding method and ultrasonic indenter design for rapid generation of high melting point joints
  • A chip bonding method and ultrasonic indenter design for rapid generation of high melting point joints

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] See attached figure 1 , 2 , Shown in 3, a kind of chip bonding method of fast generation high melting point joint, connecting material comprises base material one (1), intermediate layer two (2) and base material three (3), and this bonding method comprises the following steps:

[0053] I. Surface treatment of the materials to be connected: mechanically polish the base material one (1), the middle layer (2) and the base material three (3) to ensure the removal of surface oil and attachments, and ultrasonically clean the raw materials after grinding 1 to 5 minutes;

[0054] II. Place base material three (3) on the lower layer, base material one (1) on the upper layer and the middle layer (2) in the middle to form a "sandwich" structure;

[0055] III. Heat the base material three (3) with a heating device, and make the middle layer two (2) reach a predetermined melting temperature of 240-260°C through heat conduction;

[0056] IV. The ultrasonic vibration indenter 5 ac...

Embodiment 2

[0069] See attached figure 1 , 2 , 3, a chip bonding method and ultrasonic indenter design for quickly generating high melting point joints, the connecting materials include base material one (1), intermediate layer two (2) and base material three (3), the bond The combination method includes the following steps:

[0070] I. Surface treatment of the materials to be connected: mechanically polish the base material one (1), the middle layer (2) and the base material three (3) to ensure the removal of surface oil and attachments, and ultrasonically clean the raw materials after grinding 1 to 5 minutes;

[0071] II. Place base material three (3) on the lower layer, base material one (1) on the upper layer and the middle layer (2) in the middle to form a "sandwich" structure;

[0072] III. Heat the base material three (3) with a heating device, and make the middle layer two (2) reach a predetermined melting temperature of 240-260°C through heat conduction;

[0073] IV. The ultr...

Embodiment 3

[0087] See attached figure 1 , 2 , 3, a chip bonding method and ultrasonic indenter design for quickly producing high-melting point joints, the connecting materials include base material one (1), intermediate layer two (2) and base material three (3), the bonding The method includes the following steps:

[0088] I. Surface treatment of the materials to be connected: mechanically polish the base material one (1), the middle layer (2) and the base material three (3) to ensure the removal of surface oil and attachments, and ultrasonically clean the raw materials after grinding 1 to 5 minutes;

[0089] II. Place base material three (3) on the lower layer, base material one (1) on the upper layer and the middle layer (2) in the middle to form a "sandwich" structure;

[0090] III. Heat the base material three (3) with a heating device, and make the middle layer two (2) reach a predetermined melting temperature of 240-260°C through heat conduction;

[0091] IV. The ultrasonic vib...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
melting pointaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a chip bonding method for fast generating a high-melting-point joint and ultrasonic pressure head design. The invention designs a special vibration pressure head structure capable of applying vibration around a chip, achieving fast wetting of Sn-based brazing filler metal on a Cu substrate when pressure is not applied to the chip, intensifying a joint and increasing the service temperature of the joint. Compared with another chip bonding method for forming a high-temperature interconnected joint, the method may acquire a high welded rate, a high melting point, high strength (60 to 80MPa), high thermal conductivity (50 to 80W / (m.K)), and a wide service temperature range when pressure is not applied to the chip and bonding time is short. As a result, a chip bonding joint acquired by the method can be used in severe environment with high service temperature and high strength, and is especially suitable for packaging technology of broad-band-gap semiconductor devices.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a chip bonding method for rapidly forming high-melting point joints and the design of an ultrasonic indenter. Background technique [0002] Today, with the rapid development of science and technology, semiconductor devices have become smaller, thinner, more integrated, more functional, and the working environment has become harsher. In addition, with the rapid development of the energy industry and the aerospace industry, more and more microelectronic devices are required to serve stably in harsh environments, especially to work well in high-temperature environments. For example, MEMS sensors used in drilling machinery in the energy industry have an ambient temperature higher than 300°C. [0003] Another example is some high-temperature power electronic systems used in aerospace equipment, whose operating temperature even reaches 400°C. The new trend in the applica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/603B23K20/10
CPCH01L24/95H01L2224/83101
Inventor 计红军乔云飞
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap