A kind of gourd string structure cadmium-tellurium heterojunction photocatalytic composite material and preparation method and use

A composite material, cadmium sulfide technology, applied in cadmium sulfide, nanotechnology for materials and surface science, element selenium/tellurium, etc., can solve the problem of harsh synthesis conditions, inconvenient mass production, and inconvenient operation of chemical vapor deposition method question

Active Publication Date: 2017-05-03
WENZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, there are still many defects in the above synthesis methods, such as: the chemical vapor deposition method requires harsh synthesis conditions, generally requires high-temperature heating, rushing into an inert gas, and controlling the substrate temperature, etc., which is not easy to operate and is not suitable for mass production; and the hydrothermal method. The synthesis time is more than 10 hours, which is not convenient for mass production, and the reaction is carried out in the reactor, and the crystal growth process cannot be observed in situ, which is not convenient for studying the crystal growth mechanism.

Method used

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  • A kind of gourd string structure cadmium-tellurium heterojunction photocatalytic composite material and preparation method and use
  • A kind of gourd string structure cadmium-tellurium heterojunction photocatalytic composite material and preparation method and use
  • A kind of gourd string structure cadmium-tellurium heterojunction photocatalytic composite material and preparation method and use

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Embodiment 1

[0045] S1: To an appropriate amount of organic solvent ethylene glycol, add tellurium diethyldithiocarbamate (TDEC) and cadmium diethyldithiocarbamate (CED) at a mass ratio of 5:3, and use a magnetic stirrer Fully stir and mix evenly to obtain the precursor reaction solution;

[0046] S2: The precursor reaction solution is subjected to a two-stage microwave heating constant temperature reaction to obtain a cadmium sulfide-tellurium heterojunction photocatalytic composite material, specifically:

[0047] S2-1: Under the microwave power of 200W, heat the precursor reaction solution obtained in step S1 from room temperature to 90° C., and keep at this temperature for 5 minutes to obtain the first reaction solution;

[0048] S2-2: Continue heating the first reaction solution to 160° C. under a microwave power of 500 W, and keep at this temperature for 5 minutes to obtain a second reaction solution;

[0049] S2-3: naturally cool the second reaction solution to room temperature, an...

Embodiment 2-3

[0050] Embodiment 2-3: the investigation of raw material consumption ratio

[0051] Except that tellurium diethyldithiocarbamate (TDEC) and cadmium diethyldithiocarbamate (CED) of different mass ratios shown in Table 1 below are used in step S1, other operations are all the same as in Example 1, Thereby carrying out embodiment 2-3, used raw material dosage ratio and composite material nomenclature are shown in table 1 below.

[0052] Table 1. Composite materials prepared under different raw material dosage ratios

[0053]

Embodiment 4-9

[0054] Embodiment 4-9: Investigation of microwave power

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Abstract

The invention relates to a method for preparing a cadmium sulfide-tellurium heterojunction photocatalytic composite material with a gourd string structure. The method comprises the following steps: S1: adding a sulfur-containing tellurium source precursor and a cadmium source precursor into an organic solvent , fully stirred, and mixed evenly to obtain a precursor reaction solution; S2: performing a two-stage microwave heating constant temperature reaction on the precursor reaction solution, thereby obtaining the cadmium sulfide-tellurium heterojunction photocatalytic composite material with the gourd string structure. Through the selection and combination of specific process steps and process parameters in the preparation method, a cadmium sulfide-tellurium heterojunction photocatalytic composite material with a gourd string structure and excellent hydrogen production performance is obtained, which can be used for photolysis of water In the field of hydrogen production, it has good application prospects and industrialization potential.

Description

technical field [0001] The invention provides a heterojunction composite material of n-type semiconductor and p-type semiconductor and its preparation method and application, more specifically, it provides a gourd string structure cadmium sulfide-tellurium heterojunction photocatalytic composite material and The preparation method and application belong to the field of inorganic semiconductor materials. Background technique [0002] In the field of inorganic semiconductor materials, CdS is a typical semiconductor. The band gap of CdS photocatalyst is 2.4eV, and the positions of conduction band potential (-0.87eVvs THE) and valence band potential (1.5eV) can meet the conditions of complete photolysis of water. Therefore, CdS can improve the utilization rate of sunlight and become one of the semiconductor catalysts that has attracted much attention in the sulfide system. [0003] However, when CdS is not surface modified and modified, its activity of photo-splitting water to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/02C01G11/02B82Y30/00B82Y40/00
Inventor 王舜金辉乐胡建强刘爱丽何宇华凌鹏生尹德武
Owner WENZHOU UNIV
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