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IGTO encapsulation structure

A technology of packaging structure and ring structure, which is applied in the direction of output power conversion devices, electrical components, etc., can solve the problems of increased volume and weight, waveform distortion and noise, and reduced efficiency, and achieves large connection contact area, good heat dissipation, and high efficiency. The effect of facilitating heat conduction

Active Publication Date: 2015-10-28
WUXI TONGFANG MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This requires the addition of commutation circuits, which not only increases the volume and weight of the equipment, but also reduces efficiency and generates waveform distortion and noise

Method used

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0025] The IGTO packaging structure proposed by the present invention includes a GTO device 1, a driving circuit board 2, a conductive substrate 3 and a protective cover 4;

[0026] GTO device 1 such as figure 2 As shown, it is generally in the shape of a round cake, including a ceramic insulating shell 101. The anode 102 of the GTO device is in the middle of the top of the insulating shell 101 and serves as the anode of the IGTO device; the outer surface of the insulating shell 101 of the GTO device is provided with two The upper and lower ring structures are spaced apart, the last ring structure is the gate electrode ring 103 of the GTO device, and the next ring structure is the cathode ring 104 of the GTO device; figure 1 The marks 103 and 104 in the GTO are the gate and cathode of GTO; while the traditional GTO gate lead wire is a copper wire of 4 square ...

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Abstract

The invention provides an IGTO encapsulation structure comprising a GTO device and a driving circuit board. The GTO device includes an insulating shell, and the middle of the top of the insulating shell is the anode of the GTO device and also the anode of an IGTO device. The outer side face of the GTO device is provided with two annular structures which are spaced from each other up and down, wherein the upper annular structure is a gate ring of the GTO device, and the lower annular structure is a cathode ring of the GTO device. The cathode ring of the GTO device is discontinuous, and has at least one gap. Part of the cathode ring of the GTO device is clamped into a mounting hole of the driving circuit board through the gaps first, and then the GTO device is clamped into the mounting hole of the driving circuit board through rotation. The cathode ring and the gate ring of the GTO device are respectively disposed on the back and front of the driving circuit board, and the gate ring and the cathode ring of the GTO device are respectively in close contact and electrically connected with first electrical connection areas on the front and back of the driving circuit board. The IGTO encapsulation structure has small lead inductance and good cooling performance, and is convenient to crimp and use.

Description

technical field [0001] The invention relates to an electronic device packaging structure, in particular to an IGTO device packaging structure. Background technique [0002] Turn-off thyristor GTO (Gate Turn-Off Thyristor) is also known as gate-controlled thyristor. After the ordinary thyristor (SCR) is triggered by the positive signal of the gate, it can maintain the on state even if the signal is removed. To turn it off, the power supply must be cut off so that the forward current is lower than the holding current, or a reverse voltage is applied to close it. This requires the addition of a commutation circuit, which not only increases the volume and weight of the device, but also reduces efficiency and generates waveform distortion and noise. The turn-off thyristor (GTO) overcomes the above defects. It not only retains the advantages of ordinary thyristors such as high withstand voltage and large current, but also has self-shutoff capability, so it is more convenient to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
Inventor 潘烨白玉明张海涛
Owner WUXI TONGFANG MICROELECTRONICS
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