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Method for preparing znte epitaxial thick film on (100) Gaas substrate

A substrate and thick film technology, applied in chemical instruments and methods, from condensed steam, single crystal growth, etc., can solve the problems of low growth rate and difficulty in realizing epitaxial epitaxial film, etc., and achieve the effect of fast growth rate

Active Publication Date: 2017-11-07
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the growth rate of the MOVPE method is low, and it is difficult to achieve an epitaxial film with an epitaxy of more than 10 μm and a controllable thickness.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: A 10 μm thick ZnTe epitaxial thick film is grown on a (100) GaAs substrate.

[0018] Step 1: Prepare the growth source: ZnTe crystal ingot grown by the vertical Bridgman method, and the remaining polycrystalline block after cutting off the single crystal is cut into 5×5×2mm 3 Polish each surface of the wafer on 5000# sandpaper, use MgO suspension to carry out rough polishing, and silica sol to carry out fine polishing, then it is successively ultrasonically cleaned in acetone and absolute ethanol for 15min, and then cleaned with high-purity N 2 Blow dry, and dry in a vacuum oven (100° C.) for 10 minutes for later use.

[0019] Prepare (100)GaAs substrate: (100)GaAs wafer is a GaAs crystal grown by vertical gradient solidification method, cut along the [100] crystal direction, polished on both sides, the surface treatment is Epi-ready level, and the thickness of the wafer is 500±25μm. Cut the wafer into a size of 10×10×0.5mm with a diamond cutter3 After t...

Embodiment 2

[0026] Embodiment 2: A 75 μm thick ZnTe epitaxial thick film is grown on a GaAs (100) substrate.

[0027] Step 1: Prepare the growth source: ZnTe crystal ingot grown by the vertical Bridgman method, and the remaining polycrystalline block after cutting off the single crystal is cut into 5×5×2mm 3 Polish each surface of the wafer on 5000# sandpaper, use MgO suspension to carry out rough polishing, and silica sol to carry out fine polishing, then it is successively ultrasonically cleaned in acetone and absolute ethanol for 15min, and then cleaned with high-purity N 2 Blow dry, and dry in a vacuum oven (100° C.) for 10 minutes for later use.

[0028] Prepare (100)GaAs substrate: (100)GaAs wafer is a GaAs crystal grown by vertical gradient solidification method, cut along the [100] crystal direction, polished on both sides, the surface treatment is Epi-ready level, and the thickness of the wafer is 500±25μm. Cut the wafer into a size of 10×10×0.5mm with a diamond cutter 3 After...

Embodiment 3

[0035] Embodiment 3: A 200 μm thick ZnTe epitaxial thick film is grown on a GaAs (100) substrate.

[0036] Step 1: Prepare the growth source: ZnTe crystal ingot grown by the vertical Bridgman method, and the remaining polycrystalline block after cutting off the single crystal is cut into 5×5×2mm 3 Polish each surface of the wafer on 5000# sandpaper, use MgO suspension to carry out rough polishing, and silica sol to carry out fine polishing, then it is successively ultrasonically cleaned in acetone and absolute ethanol for 15min, and then cleaned with high-purity N 2 Blow dry, and dry in a vacuum oven (100° C.) for 10 minutes for later use.

[0037] Prepare (100)GaAs substrate: (100)GaAs wafer is a GaAs crystal grown by vertical gradient solidification method, cut along the [100] crystal direction, polished on both sides, the surface treatment is Epi-ready level, and the thickness of the wafer is 500±25μm. Cut the wafer into a size of 10×10×0.5mm with a diamond cutter 3 Afte...

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Abstract

The invention discloses a method for preparing a ZnTe extension thick membrane on a (100) GaAs substrate to solve the technical problem that the growing speed is low when the ZnTe extension thick membrane is prepared through an existing method. According to the technical scheme, a processed ZnTe growing source and the (100) GaAs substrate are placed into a cavity of a growing furnace; before growing, high-purity Ar is used for repeatedly washing the cavity of the growing furnace to remove residual air and Ar is fed until the target intensity of pressure is achieved, the ZnTe growing source and the (100) GaAs substrate are heated to a certain temperature, the temperature of the growing source continues to be increased to the target temperature, the substrate stops being heated, and the temperature needed by growing of the thick membrane is maintained through heat radiation at the growing source. The growing speed of the ZnTe extension thick membrane is controlled by controlling the temperature of the ZnTe growing source, the pressure of the cavity of the growing furnace and the distance between the growing source and the substrate, and the growing speed is increased to 20-100 microns per hour from 10 microns per hour in the prior art.

Description

technical field [0001] The invention relates to a method for preparing a ZnTe epitaxial thick film, in particular to a method for preparing a ZnTe epitaxial thick film on a (100) GaAs substrate. Background technique [0002] ZnTe crystal is a II-VI compound semiconductor material, which is a direct band gap semiconductor with a band gap of 2.26eV at room temperature. It has a high second-order nonlinear coefficient and electro-optic coefficient, and the <110> oriented ZnTe bulk material has the best phase matching under the action of laser pulses around 800nm. It has become the most commonly used method for generating and detecting terahertz (THz) radiation. Electro-optic materials (Turchinovich D, Dijkhuis J I. Performance of combined<100>–<110>ZnTecrystals in an amplified THz time-domain spectrometer[J], Opticscommunications, 2007,270(1):96-99.). The development of theoretical research and practical application of ZnTe material devices has put forward mo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B23/02
Inventor 査钢强李嘉伟李颖锐曹昆席守志蔺云汤三奇介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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