A preparation of ktiopo by ion implantation combined with chemical etching 4 single crystal thin film method

A technology of ion implantation and chemical etching, applied in ion implantation plating, metal material coating process, vacuum evaporation plating, etc., to achieve the effect of easy peeling, easy realization and wide application range

Inactive Publication Date: 2017-07-07
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, there is no relevant report on the preparation of optical crystal thin films by ion implantation technology combined with chemical etching

Method used

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  • A preparation of ktiopo by ion implantation combined with chemical etching <sub>4</sub> single crystal thin film method
  • A preparation of ktiopo by ion implantation combined with chemical etching <sub>4</sub> single crystal thin film method

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Effect test

Embodiment 1

[0037] Potassium titanyl phosphate material (size: 10mm×10mm×1mm) was cleaned, and He ions with energy 2000keV were implanted into the Z-tangential potassium titanyl phosphate material at room temperature, and the implantation dose was 4×10 16 Ions / cm2; annealing treatment is carried out after implantation, the annealing temperature is gradually increased from room temperature to 350 degrees Celsius, kept at 350 degrees Celsius for 30 minutes, and finally etched in 5% HF solution at 20 degrees Celsius for 2 hours to achieve film peeling.

Embodiment 2

[0039] Clean the potassium titanyl phosphate material (size: 10mm×10mm×1mm), and implant it into the Z-tangential potassium titanyl phosphate material at room temperature with He ions with an energy of 150keV, and the implantation dose is 8×10 16 Ions / square centimeter; annealing treatment is performed after implantation, the annealing temperature is gradually increased from room temperature to 350 degrees Celsius, kept at 350 degrees Celsius for 30 minutes, and finally etched in a nitric acid solution with a mass concentration of 5% at 60 degrees Celsius for 2 hours to achieve film peeling.

Embodiment 3

[0041] Clean the potassium titanyl phosphate material (size: 10mm×10mm×1mm), and implant it into the Z-tangential potassium titanyl phosphate material at room temperature with He ions with an energy of 6000keV, and the implantation dose is 1×10 17 Ions / cm²; annealing treatment is performed after implantation, the annealing temperature is gradually increased from room temperature to 400 degrees Celsius, kept at 400 degrees Celsius for 30 minutes, and finally etched in a molten potassium hydroxide solution with a mass concentration of 5% at 360 degrees Celsius for 2 hours to achieve Film peeled off.

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Abstract

The invention relates to a method for preparing a KTiOPO4 single crystal thin film through ion implantation in combination with chemical etching. According to the method, H or He ions are injected into a crystal sample within the low-energy range (100-60,000 keV), the injected ion dosage ranges from 1*1,016 ions / square centimeter to 10*1,016 ions / square centimeter, and the injection temperature is a room temperature or a low temperature; then, annealing treatment is conducted on the sample, the annealing temperature ranges from 200 DEG C to 600 DEG C, the total duration of annealing ranges from 10 seconds to 2 hours; etching is conducted on the sample through a chemical reagent, and crystal thin film stripping is achieved. By the adoption of the method, after He ions with the energy of 2,000 keV and the dosage of 4*1,016 are injected into the Z-tangential KTP sample, the annealed sample is put into an HF solution to be etched, and thin film stripping is achieved. By the adoption of the method, the KOTiPO4 crystal thin film with the thickness of 5 micrometers is obtained, and the way of obtaining the KTP single crystal thin film by conducting ion injection in combination with chemical etching is utilized for the first time so far.

Description

technical field [0001] The invention relates to an optical crystal (KTiOPO) prepared by ion implantation technology combined with chemical etching 4 ) thin film method, belongs to the technical field of optical crystal materials. Background technique [0002] Optical devices are gradually replacing electronic components in information and signal processing, because compared with electronic components, optoelectronic devices have many advantages, such as larger bandwidth, wavelength division multiplexing, and low power consumption. Optical crystal materials with excellent photoelectric, piezoelectric, ferroelectric and nonlinear properties, such as LiNbO 3 , LiTaO 3 and KTiOPO 4 It has a wide range of applications in surface wave filters, optical waveguides, photoelectric modulators, frequency multiplication conversion, and information storage. With the development trend of integration and miniaturization of optoelectronic devices and products, integrating more optoelectr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48C23C14/58
Inventor 卢霏马长东许波范冉冉
Owner SHANDONG UNIV
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