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Method for preparing polycrystalline aluminum oxide hard coating

A polycrystalline alumina, hard coating technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problem of poor mechanical properties of coatings, no application of grown oxide hard coatings, etc. problems, to achieve the effect of high hardness, good industrial application prospects, and simple and feasible technical solutions

Inactive Publication Date: 2015-10-07
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the gas reaction closed-loop control system can control the growth mode of the oxide in the metal mode and the reaction mode by adjusting the set value during the preparation of the oxide, so as to realize the rapid deposition of the oxide, but it is mainly used in the application of photoelectric thin films at present. There is no application in hard coating
Moreover, the alumina coating is basically amorphous at low temperatures, and the mechanical properties of the coating are poor.

Method used

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  • Method for preparing polycrystalline aluminum oxide hard coating
  • Method for preparing polycrystalline aluminum oxide hard coating
  • Method for preparing polycrystalline aluminum oxide hard coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment 1 Realize the present invention according to the following steps:

[0024] (1) Clamp the cleaned workpiece on the workpiece rack, turn on the vacuum system, and vacuum it. When the vacuum degree is higher than 5×10 -3 Pa, start heating and degassing, the temperature is controlled at 300 °C; the workpiece holder keeps rotating at 3 rpm, when the vacuum degree is 5×10 -3 At Pa, enter Ar gas, turn on the bias power supply, and perform glow cleaning on the workpiece. The vacuum is kept at 0.5 Pa, the bias voltage is 800V, and the glow time is 20 minutes;

[0025] (2) After glow cleaning, adjust the vacuum to 3×10 -1 Pa, turn on the unipolar pulse power supply (constant power mode) to sputter the aluminum target, bombard the workpiece for 5 minutes to form an aluminum metal bottom layer with a thickness of about 10 nm, keep the bias voltage at 600 V, and the duty cycle is 60%;

[0026](3) After the bombardment is completed, the bias voltage drops to 100V, the d...

Embodiment 2

[0028] Embodiment 2 realizes the present invention according to the following steps:

[0029] (1) Clamp the cleaned workpiece on the workpiece rack, turn on the vacuum system, and vacuum it. When the vacuum degree is higher than 5×10 -3 Pa, start heating and degassing, the temperature is controlled at 300 °C; the workpiece holder keeps rotating at 3 rpm, when the vacuum degree is 5×10 -3 At Pa, enter Ar gas, turn on the bias power supply, and perform glow cleaning on the workpiece. The vacuum is kept at 0.5 Pa, the bias voltage is 800V, and the glow time is 20 minutes;

[0030] (2) After glow cleaning, adjust the vacuum to 3×10 -1 Pa, turn on the unipolar pulse power supply (constant power mode) to sputter the aluminum target, bombard the workpiece for 5 minutes to form an aluminum metal bottom layer with a thickness of about 10 nm, keep the bias voltage at 600 V, and the duty cycle is 60%;

[0031] (3) After the bombardment is completed, the bias voltage is reduced to 100V...

Embodiment 3

[0033] Embodiment 3 realizes the present invention according to the following steps:

[0034] (1) Clamp the cleaned workpiece on the workpiece rack, turn on the vacuum system, and vacuum it. When the vacuum degree is higher than 5×10 -3 Pa, start heating and degassing, the temperature is controlled at 300 °C; the workpiece holder keeps rotating at 3 rpm, when the vacuum degree is 5×10 -3 At Pa, enter Ar gas, turn on the bias power supply, and perform glow cleaning on the workpiece. The vacuum is kept at 0.5 Pa, the bias voltage is 800V, and the glow time is 20 minutes;

[0035] (2) After glow cleaning, adjust the vacuum to 3×10 -1 Pa, turn on the unipolar pulse power supply (constant power mode) to sputter the aluminum target, bombard the workpiece with a thickness of about 10 nanometers of aluminum metal bottom layer for 5 minutes, keep the bias voltage at 600 V, and the duty cycle is 60%;

[0036] (3) After the bombardment is completed, the bias voltage is reduced to 100V...

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Abstract

The invention discloses a method for preparing a polycrystalline aluminum oxide hard coating. According to the method, the polycrystalline aluminum oxide hard coating is prepared by using gas reaction closed-loop control and anode layer ion source assisted magnetron sputtering deposition, gamma-phase Al2O3 in a good crystalline state can be deposited at a relatively low temperature between 200 and 300 DEG C at a speed of 20-30nm / min, and the obtained aluminum oxide coating has relatively high hardness and an ideal stoichiometric ratio; and moreover, the regulation and control of the stress and a microstructure of the coating can be realized by regulating and controlling the energy of the anode layer ion source. The method disclosed by the invention is simple, is strong in process repeatability, and has important application values in the industrial production fields of mechanics, electronics and optics.

Description

technical field [0001] The invention relates to a method for preparing an alumina coating, specifically a method for preparing a polycrystalline alumina hard coating by using gas reaction closed-loop control and anode layer ion source-assisted magnetron sputtering deposition, which belongs to the coating preparation technology field. Background technique [0002] Alumina (Al 2 o 3 ) coatings are widely used in mechanical, electronic and optical fields due to their good high temperature stability, high hardness, corrosion resistance and high visible light transmittance. [0003] Al 2 o 3 There are many preparation methods for the coating, the most commonly used method is chemical vapor deposition (CVD), but the CVD deposition temperature is relatively high, usually over 600 °C to obtain Al with a crystalline phase. 2 o 3 , which greatly limits the CVD method in the preparation of Al 2 o 3 in the application. Physical vapor deposition (PVD) is the method for preparing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/46C23C14/08
Inventor 王启民王成勇邹长伟丁继成
Owner GUANGDONG UNIV OF TECH
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