tft substrate group and its manufacturing method

Abstract

The invention provides a TFT substrate group and a manufacturing method thereof. The TFT substrate group of the present invention includes several TFT substrates and interval regions separating the several TFT substrates, metal electrodes are arranged on the TFT substrates, and metal patterns spaced from the metal electrodes are arranged in the interval regions , by retaining a certain proportion of the metal pattern in the interval area, the etching area is reduced, and the problem of endless etching at the edge of the metal electrode is improved, and the concentration of copper ions generated in the etching is reduced, thereby saving the amount of etching solution , reduce production costs, and improve product quality. In the manufacturing method of the TFT substrate group of the present invention, a light-shielding belt with a pattern is used in combination with a photomask to expose, develop and etch the metal layer, and retain the metal pattern spaced apart from the metal electrode in the spaced area, which can Reduce the etching amount of the metal layer in the etching process, thereby reducing the consumption of etching solution, improving etching efficiency, and reducing the risk of endless etching.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate group and a manufacturing method thereof. Background technique [0002] Liquid crystal display (Liquid Crystal Display, LCD) has many advantages such as thin body, power saving, no radiation, etc., and has been widely used, such as: mobile phone, personal digital assistant (PDA), digital camera, computer screen or notebook computer screen etc. [0003] The display panel is an important part of LCD and OLED. Whether it is an LCD display panel or an OLED display panel, it usually has a thin film transistor (Thin Film Transistor, TFT) array substrate. Taking the LCD display panel as an example, it is mainly composed of a TFT array substrate, a color filter substrate (Color Filter, CF), and a liquid crystal layer (Liquid Crystal Layer) arranged between the two substrates. Its working principle The rotation of the liquid crystal molecules in the liquid crystal laye...

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Problems solved by technology

[0007] During the etching process of the copper process, as the concentration of copper ions in the etching solution increases, the etching ability of the etching solution decreases. Under different etching modes, there is a maximum concentration of copper ions. If this concentration is exceeded, there is a risk of unclean etching.

For example, in a certain etching mode, if the maximum concentration of copper ions in the etching solution is greater than 3000ppm, there will be a risk of incomplete etching; in addition, the copper process etching solution has a short service life of only 24 hours. These characteristics make the etching solution The life cycle is shortened and the cost of the copper process is increased

[0008] like figure 1 As shown, it is a schematic diagram of the design of the metal layer in an existing TFT substrate group; the TFT substrate group includes several TFT substrates 200 arranged in a matrix, and the passage between the several TFT substrates 200 is in the form of a grid. The interval regions 300 are spaced apart, and the metal electrodes 210 are respectively provided on the several TFT substrates 200. The interval regions 300 are not covered by the metal layer. The manufacturing method of the metal layer in the existing TFT substrate group is: in the TFT Metal copper is deposited on the surface of the substrate group to form a copper layer, and then the copper layer is patterned. In the process of patterning the copper layer, it is necessary to etch away all the copper located in the spacer region 300, and the etching of this part of the copper will Increase the concentration of copper ions in the etchant, thereby increasing the consumption of the etchant; and because the spacer region 300 often occupies a certain area ratio on the entire TFT substrate group, resulting in a low etching rate (EtchingRate), making this region prone to etching various phenomena, such as Figure 2-3 As shown, metal copper remains in the space area 300 close to the metal electrode 210, so that the pattern of the metal layer cannot be realized according to the design pattern, which affects the stability of the process and the quality of the product.

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