TFT substrate group and manufacturing method therefor
A manufacturing method and a technology of a substrate group, which are applied in semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices, etc., can solve problems such as increased consumption of etching solution, increased cost of copper manufacturing process, and incomplete etching, so as to reduce incomplete etching. The risk of exhaustion, the improvement of etching, and the effect of improving product quality
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[0039] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0040] see Figure 4-5 , the present invention firstly provides a TFT substrate group, comprising: several TFT substrates 20, and a spacer area 30 between several TFT substrates 20 to separate the several TFT substrates 20, the TFT substrate 20 is provided with metal The electrode 21 is provided with a metal pattern 31 spaced from the metal electrode 21 in the spaced area 30 .
[0041] Specifically, the material of the metal electrode 21 and the metal pattern 31 is copper.
[0042] Wherein, the plurality of TFT substrates 20 are arranged in a matrix in the TFT substrate group.
[0043] The spacer regions 30 are distributed in grid form in the TFT substrate group.
[0044] Specifically, the shape of the metal electrode 21 is a rectangle.
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