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Annular superabrasive wire and manufacturing method thereof

A technology of superabrasives and a manufacturing method, applied in the fields of semiconductor and non-conductor cutting tools and precious metals, can solve the problem of the end of the service life of the annular superabrasive wire, the low fatigue resistance of the annular superabrasive wire, and the poor quality of the cutting surface, etc. problems, to achieve the effect of good cutting surface quality, improved service life and narrow slits

Active Publication Date: 2017-03-01
CHINA NONFERROUS METAL (GUILIN) GEOLOGY & MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The annular superabrasive wire described in this invention better solved the problems of wide kerf, low efficiency, and poor cutting surface quality in the prior art at that time. The formation of multi-strand wires on textile welding will inevitably lead to multiple connection points on the formed silk rope (how many strands there will be as many connection points), however, when a ring-shaped superabrasive line exists The more connection points, the lower the fatigue strength of the annular superabrasive wire
When any one of the strands breaks out of the line, it will lead to the termination of the service life of the annular superabrasive wire

Method used

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  • Annular superabrasive wire and manufacturing method thereof
  • Annular superabrasive wire and manufacturing method thereof
  • Annular superabrasive wire and manufacturing method thereof

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Embodiment Construction

[0031] Below in conjunction with accompanying drawing, the present invention is described in further detail, to better understand content of the present invention.

[0032] The annular superabrasive wire 1 of the present invention has a base body of a wire rope with a diameter of 0.1 mm to 6 mm, and the wire rope includes a core wire 2 and a strand wound on the core wire 2 in a helical manner 3 (i.e. 1×1 rope), the end-to-end connection of the core wire 2 forms a ring shape, and the length of the strand 3 wound on the core wire 2 is to meet the length of its winding 6 turns on the core wire 2 , after the strand 3 is wound 6 times on the core wire 2, it is connected end to end to form a circular silk rope (the joint of the strand 3 is located on one side of the connection point of the core wire 2); wherein, the strand 3 Winding 6 circles on the core wire 2 refers to taking the core wire 2 as the axis, pulling the head end of the strand 3 from a certain place on the core wire 2 (t...

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Abstract

The invention discloses an annular superhard abrasive wire and a manufacturing method thereof. The base body of the annular superhard abrasive wire is a wire rope, the wire rope is connected in an end-to-end mode to form an annular shape, superhard abrasive particles are uniformly consolidated on the surface of the wire rope so as to form a superhard abrasive layer, the superhard abrasive layer is a single particle thickness layer, the wire rope comprises a core and compound yarns spirally wound on the core, the initial end and the tail end of the core are connected to form an annular shape, the length of the compound yarns wound on the core meets the requirement that the compound yarns can be wound on the core for six turns, after the compound yarns are wound on the core for six turns, the compound yarns are connected in an end-to-end mode, and joints of the compound yarns are disposed at one side of a core connecting point. The annular superhard abrasive wire is narrow in joint cutting, high in efficiency and good in cutting surface quality, and also has higher anti-fatigue strength.

Description

technical field [0001] The invention relates to cutting tools for precious metals, semiconductors and non-conductors, in particular to an annular superhard abrasive wire and a manufacturing method thereof. Background technique [0002] Brittle and hard materials such as silicon, sapphire, and ceramics have high hardness and high brittleness, and are prone to chipping and damage during the cutting process, causing damage to the material and reducing the yield. Therefore, these materials are difficult to cut by ordinary processing methods. Traditional semiconductor materials and ceramic materials are usually cut by diamond inner circle and outer circle cutting technology, diamond band saw. With the development of the semiconductor industry, the diameter of monocrystalline silicon ingots is getting larger and larger, reaching 450 mm, and polycrystalline silicon ingots are also 800 mm. At present, band saws are mainly used for cutting, truncating and squaring. The cutting effic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04B28D1/12
CPCB28D1/127B28D5/045
Inventor 陈超林峰秦建新肖乐银谢德龙潘晓毅张莉丽苏钰程煜
Owner CHINA NONFERROUS METAL (GUILIN) GEOLOGY & MINING CO LTD
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