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Small-sized planar high-gain inverted-F antenna

A flat, small-sized technology, applied in the direction of the structure and form of the radiating element, can solve the problems affecting the use effect of mobile terminal products, the omnidirectional average gain value cannot be exceeded, and the gain is low, so as to reduce the inductive reactance and equivalent radiation resistance. ratio, increase the effective radiation area, and improve the effect of antenna gain

Inactive Publication Date: 2015-09-02
SHENZHEN GONGJIN ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] But this kind of antenna has a very fatal defect, the gain is low, and the conventional omnidirectional average gain value cannot exceed 1.5dBi, which seriously affects the use effect of mobile terminal products in weak signal environments

Method used

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  • Small-sized planar high-gain inverted-F antenna
  • Small-sized planar high-gain inverted-F antenna

Examples

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Embodiment 1

[0016] Example 1 see figure 2 , the improved high-gain dual-band PIFA antenna provided in this embodiment has a secondary radiation section 70, a second signal transmission section 60, a main radiation section 50, a first signal transmission section 40, an impedance matching section 30, and a signal feeding point 20 , Ground point 10.

[0017] Starting from the signal feeding point 20, passing through the signal input section 80, the impedance matching section 30, the first signal transmission section 40, the signal conversion section 90 to the grounding point 10 is called the main matching line, and the length of the main matching line is 1 / 4 wavelength.

[0018] The transmission signal entering from the signal feeding point 20 passes through the signal input section 80 , the impedance matching section 30 , and the first signal transmission section 40 , and reaches the main radiation section 50 to generate the first complete radiation.

[0019] The transmission signal that...

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Abstract

The invention discloses a small-sized planar high-gain inverted-F antenna comprising a primary radiant section, a second signal transmission section, and a secondary radiant section. The primary radiant section is disposed on a primary matching line which is a wire reaching a grounding point from a signal feed-in point via a signal input section, an antenna impedance match section, a first signal transmission section, and a signal conversion section. The primary radiant section is a first radiation portion extended from signal transmission section. The second signal transmission section is a transmission section extended from the primary radiant section opposite to the direction of the signal transmission section. The secondary radiant section is a second radiation portion extended from the second signal transmission section. The improved inverted-F antenna is increased in gain, provided with miniaturized and low overall dimension characteristics, and decreased in cost, and keeps the overall product appearance.

Description

technical field [0001] The invention relates to an inverted-F antenna, in particular to a small-sized planar high-gain inverted-F antenna. Background technique [0002] Now with the rapid development of mobile communication and the improvement of people's material living standards, handheld mobile communication equipment has become an indispensable tool for daily life. The penetration rate of various mobile terminal devices in the society is increasing very fast, and under the background of the country's "three networks in one" policy, the Internet, radio and television networks, and data communication networks will be merged into one network, rich network information resources , can allow individuals to obtain desired information through a network, and can also allow enterprises to provide a variety of forms of access to the network. Among them, the most convenient and fastest way is the wireless access method, because the wireless access method saves A large amount of net...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/36
Inventor 覃东昱邹丹
Owner SHENZHEN GONGJIN ELECTRONICS CO LTD
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