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Equivalent circuit model establishing method of Ge/Si SACM structure avalanche photodiode

An equivalent circuit model, avalanche photoelectric technology, applied in electrical digital data processing, special data processing applications, instruments, etc., to achieve the effect of convenient simulation and design

Active Publication Date: 2015-07-22
禹德芯电子科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

M.J Deen et al. used a method similar to "black box" modeling to establish the APD equivalent circuit model, directly equivalent the transfer function to a controlled source, and there is no direct corresponding component in the circuit. Such a structure is difficult to implement in EDA circuit simulation software. Direct realization of modular analog design in

Method used

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  • Equivalent circuit model establishing method of Ge/Si SACM structure avalanche photodiode
  • Equivalent circuit model establishing method of Ge/Si SACM structure avalanche photodiode
  • Equivalent circuit model establishing method of Ge/Si SACM structure avalanche photodiode

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Experimental program
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Effect test

Embodiment 1

[0115] Under reverse bias, the incident light can be converted into output current, Figure 5 The simulation results of the I-V characteristics of the circuit model of Ge / Si SACM-APD are shown, where the dark current clearly shows the rectification behavior. At low bias voltage, the dark current is mainly affected by generation-recombination current and ohmic current. At high bias, additional dark current is induced by the tunneling current at the Ge / Si interface due to the avalanche multiplication effect of the APD. The avalanche breakdown voltage value of the circuit model designed by the present invention is 27.3V, so it can be seen that the simulation results can be consistent with the typical experimental results of 24V-28V.

Embodiment 2

[0117] Noise performance is an important index to identify the performance of photodetectors. Noise evaluation plays a very important role in the application of photodetectors and reducing the influence of noise on signals. Figure 6 The shot noise curves under different input optical power conditions are given. Such as Figure 6 As shown, the shot noise of the APD increases with the increase of the optical power, because the mean value of the square of the noise current of the APD is proportional to the size of the photogenerated current. But it is worth noting that the noise current curve changes relatively flat at low bias voltage, and it does not increase sharply with the increase of bias voltage until it is close to the breakdown voltage. This is due to the increase of reverse bias voltage. The increase in ionization coefficient and photocurrent.

Embodiment 3

[0119] The frequency response bandwidth reflects the high-speed performance of the photodetector in the frequency domain, Figure 7 The frequency response curves of the output under different reverse bias voltages are given. At low bias voltage, the bandwidth is mainly limited by the carrier transport time and RC constant, the lower frequency response increases with the increase of bias voltage, and decreases again when the bias voltage reaches -27V. However, at high bias, the bandwidth is mainly affected by the avalanche settling time, and the 3dB bandwidth decreases with increasing reverse bias. The above simulation results are in good agreement with the experimental results.

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Abstract

The invention relates to an equivalent circuit model establishing method of a Ge / Si SACM structure avalanche photodiode and belongs to the technical field of semiconductor photodiodes. The method is based on Ge / Si heterojunction features. A Ge / Si SACM-APD device is subjected to theoretical analysis from the physical mechanism in the device. An APD equivalent circuit model is established from four parts of an APD rate equation, noise current, dark current and stray parameters. The method comprises the steps that 1. a physical model is divided into a plurality of parts, and a carrier transportation equation is established according to each structure layer; 2. a sub circuit module corresponding to each part is established; and 3. the sub circuit modules are connected with each other, and the equivalent circuit model is established. According to the method, the silicon-based APD device can be simulated and designed conveniently, and good application prospect is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodiodes, and relates to a method for establishing an equivalent circuit model of an avalanche photodiode with a Ge / Si SACM structure. Background technique [0002] With the development of optical fiber communication technology, the optical receiver, which is an important part of the optical communication network, mainly uses an avalanche photodiode (APD) with internal gain as its front-end photoelectric conversion module. Most of the early APDs were made based on III-V semiconductor materials such as InGaAs / InP, but their shortcomings such as high manufacturing cost, poor thermal conductivity and mechanical properties, and poor compatibility with existing mature Si processes limited their application in Si. Applications in optoelectronic integration technology. [0003] In view of this, a class of Ge / Si photodetectors with an avalanche diode (SACM-APD) structure that separates the absor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 王巍颜琳淑胡洁
Owner 禹德芯电子科技(上海)有限公司
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