Tunnel field effect transistor and manufacturing method thereof

Abstract

The invention discloses a tunnel field effect transistor and a manufacturing method thereof, and belongs to the technical field of field effect transistors. The tunnel field effect transistor comprises a substrate provided with a first doped region and a second doped region at two ends respectively, wherein a fin-shaped raised channel region, a protective layer, a side wall-shaped channel etching hard mask layer structure and a grid insulation medium layer are formed on the substrate; a first grid and a second grid are formed on the substrate on which the grid insulation medium layer is formed; the first grid and the second grid are positioned on two sides of the channel region respectively; an insulation material filling layer is formed on the substrate on which the first grid and the second grid are formed; the first doped region and the second doped region are spaced a preset distance, and the preset distance is greater than the width of the channel region and smaller than the length of the substrate. The tunnel field effect transistor solves a problem of relatively poor universality of an EHB-TFET (electron hole bilayer-tunnel field effect transistor) structure, achieves an effect of improving the universality, and is used for controlling the on and off of devices.

Description

technical field [0001] The invention relates to the technical field of field effect transistors, in particular to a tunneling field effect transistor and a manufacturing method thereof. Background technique [0002] With the development of integrated circuits, the size of Metal Oxide Semiconductor field effect transistors (English: Metal Oxide Semiconductor field effect transistors; MOSFET for short) continues to shrink according to "Moore's Law", and the dynamic power consumption and static power consumption density of the circuit will increase. Increase, dynamic power consumption and static power consumption can be collectively referred to as power consumption. In order to reduce power consumption of a complementary metal oxide semiconductor (English: Complementary Metal Oxide Semiconductor; CMOS for short) circuit, the driving voltage of the MOSFET can be reduced. Reducing the driving voltage of the MOSFET needs to be achieved by reducing the threshold voltage, but since...

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Problems solved by technology

[0005] In order to solve the problem of low versatility of EHB-TFET, the present invention provides a tunneling field effect transistor and its manufacturing method

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