Semiconductor device and forming method thereof

Abstract

A semiconductor device and a forming method thereof are provided. The forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate; performing first doping on the semiconductor substrate to form a first doped region; forming a patterned mask layer on the surface of the semiconductor substrate, wherein the patterned mask layer has an opening which exposes the surface of the semiconductor substrate; etching part of the semiconductor substrate in the thickness direction with the patterned mask layer as a mask to form a groove in the semiconductor substrate; and performing second doping on the semiconductor substrate to form a second doped region, wherein the first doping and the second doping are of the same doping type, the doping concentration of the second doping is greater than the doping concentration of the first doping, and the second doped region and the first doped region are connected. By adopting the method of the invention, the opening current of the semiconductor device is increased, the leakage current is reduced, and the electrical performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the rapid development of Ultra Large Scale Integration (ULSI: Ultra Large Scale Integration), the manufacturing process of integrated circuits has become more and more complex and sophisticated. In order to improve integration and reduce manufacturing costs, the critical dimensions of semiconductor devices continue to decrease, and the number of semiconductor devices per unit area of ​​a chip continues to increase. While the critical dimensions of semiconductor devices are reduced, the patterns of semiconductor devices are also continuously miniaturized. [0003] With the continuous reduction of critical dimensions of semiconductor devices, the distance between the source and drain of semiconductor devices is getting shorter and shorter. As the drain voltage continu...

AI Technical Summary

Problems solved by technology

When the source-drain is punched through, the leakage current surges, causing the gate electrode to lose control of the channel

In addition, the high electric field at the boundary of the drain terminal can also cause hot carrier effects, reduce the reliability of semiconductor devices, and reduce the turn-on current of semiconductor devices

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