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Method and device for measuring morphology of polycrystalline thin film

A technology of measuring device and measuring method, applied in the direction of measuring device, optical device, instrument, etc., can solve the problem of inability to accurately detect morphology information such as crystal domain size, crystallinity, and orientation, etc., and achieve large-area measurement. Effect

Active Publication Date: 2017-10-10
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

The light with different light intensities is imaged on the image sensor 5 to obtain figure 2 The light and dark patches shown in the figure can roughly distinguish the distribution of crystal domains, but cannot accurately detect the morphology information such as the size, crystallinity, and orientation of crystal domains.

Method used

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  • Method and device for measuring morphology of polycrystalline thin film
  • Method and device for measuring morphology of polycrystalline thin film
  • Method and device for measuring morphology of polycrystalline thin film

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Embodiment Construction

[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings.

[0045] image 3 It is a schematic diagram of transition dipole moment vector and light field vector of crystal domain. image 3The polarization 0 degree in is the initial polarization direction of the polarizer 1, θ is the angle of the optical field vector relative to the polarization 0 degree, and α is the angle of the transition dipole moment vector relative to the polarization 0 degree. It is known that the crystal domain has polarization anisotropy in the absorption of polarized light, and the light absorption of a specific transition dipole in the crystal domain to a certain polarization direction is proportional to the square of the dot product of the transition dipole moment vector and the optical field vector , which is propor...

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Abstract

The present invention provides a method and device for measuring the morphology of a polycrystalline thin film. The measuring method includes 1) obtaining at least three transmission diagrams of the polycrystalline thin film under the irradiation of polarized light at at least three polarization angles; 2. ) calculating the true transmittance of each pixel on the transmission map at the at least three polarization angles; 3) according to 1-A-B·cos2(θ-β) for each pixel in the Fit the true transmittance under at least three polarization angles to obtain the fitting values ​​of A, B and β of each pixel; 4) use the fitting value of B of each pixel according to the The positions in the transmission map are arranged in a first array, and the fitting value of β of each pixel is arranged in a second array according to the position of each pixel in the transmission map. The measurement method of the invention can measure the shape of the polycrystalline thin film intuitively, quickly, at low cost and in a large area.

Description

technical field [0001] The invention relates to the measurement field of semiconductors, in particular to a method for measuring thin film morphology. Background technique [0002] Organic semiconductor devices, such as organic light-emitting diodes, organic field-effect transistors, and organic solar cells, are cheaper and lighter than inorganic semiconductor devices, and have been used more and more widely. [0003] Organic semiconductor thin films are formed by the self-assembly of organic molecules under the weak van der Waals force, so organic semiconductor thin films are not in single crystal form, but usually in polycrystalline or amorphous form. The performance of organic semiconductor devices is directly related to the morphology of organic semiconductor films. Therefore, in the growth process of organic semiconductor thin films, it is necessary to quickly detect the morphology of organic polycrystalline thin films and optimize process parameters to improve the per...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/24
Inventor 何小川翁羽翔
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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