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Flexible active pressure sensor structure and preparation method

A pressure sensor and flexible technology, applied in the field of flexible active pressure sensor structure and preparation, can solve problems such as difficulty in obtaining high-performance device characteristics, restricting pressure sensor sensitivity, low carrier mobility, etc., and achieve a convenient implementation method , good mechanical flexibility and ductility as well as the effect of optical transparency, high carrier mobility

Active Publication Date: 2015-05-13
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Many research results have reported the use of flexible organic transistors to realize the active output and control of sensors, but organic transistors are limited by the low carrier mobility of organic semiconductor materials, and it is difficult to obtain high-performance device characteristics, which greatly Restricts the sensitivity of the pressure sensor

Method used

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  • Flexible active pressure sensor structure and preparation method
  • Flexible active pressure sensor structure and preparation method
  • Flexible active pressure sensor structure and preparation method

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Embodiment Construction

[0037] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0038] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation, transparency and simplification are not included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0039] In the following specific embodiments of the present invention, first please refer to figure 1 and figure 2 , figure 1 It is a three-dimensional schematic diagram of a flexible active pressure sensor structure in a preferred embodiment of the present invention; figure 2 It is a schematic cross-sectional structure diagram...

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Abstract

The invention discloses a flexible active pressure sensor structure and a preparation method. Flexible piezoresistive material is used for preparing source and drain electrodes of a flexible active field effect transistor to realize a pressure sensor unit structure, and a semiconductor single-walled carbon nanotube serves as channel material for constructing a flexible active field effect transistor for controlling the pressure sensing signal reading. The flexible active pressure sensor structure and the preparation method provide a very convenient implementation method for the large-scale application of the flexible pressure sensor and have a very important application prospect.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, and more specifically, to a flexible active pressure sensor structure and a preparation method. Background technique [0002] In recent years, with the rapid development of smart wearable products, flexible sensors have gradually become one of the hot topics explored by researchers. Among them, flexible pressure sensors are attracting more and more attention, which can be potentially applied to construct artificial electronic skin, and have a very broad market prospect in the field of health care in the future. In addition, flexible pressure sensors are also core components in flexible touch screen displays and intelligent robot applications, all of which indicate the potential application value of flexible pressure sensors. [0003] At present, the research on flexible pressure sensors can be based on a variety of working principles, including capacitive, ...

Claims

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Application Information

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IPC IPC(8): G01L1/18
Inventor 郭奥胡少坚周伟
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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