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Loading method of high-efficiency crucible for producing polycrystalline silicon

A polysilicon, high-efficiency technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of increasing the risk of silicon leakage, different shapes of quartz sand, crucible impact, etc., to improve melting efficiency , shorten the melting time, shorten the length of the effect

Inactive Publication Date: 2015-05-06
YANGZHOU RONGDE NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that, in view of the defect that the quartz sand in the high-efficiency crucible has different shapes in the prior art, it is difficult to achieve uniform nucleation points by using it to make a high-efficiency coating, and the purity of the quartz sand It is also more difficult to control, and it may cause the red area at the bottom of the silicon ingot to be too long. Casting high-efficiency polycrystalline in this type of crucible requires cold shock in the nucleation stage, which will cause impact on the crucible and increase the risk of silicon leakage. Provided A charging method for an efficient crucible for producing polysilicon

Method used

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  • Loading method of high-efficiency crucible for producing polycrystalline silicon
  • Loading method of high-efficiency crucible for producing polycrystalline silicon
  • Loading method of high-efficiency crucible for producing polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Screen polycrystalline fragments with a length of 3-12mm, pickle, rinse until there is no acid residue, and dry to obtain the base material a; sort silicon materials with a thickness of 3-5cm and a size of 156mm*156mm to obtain the base material b;

[0038] Sprinkle a layer of the above-mentioned primer a evenly on the bottom of the high-efficiency crucible until the coating on the bottom of the high-efficiency crucible cannot be seen visually, then spread the above-mentioned primer b on top of the primer a and press it to make it flat. leave no gaps;

[0039] Spread the edge skin reclaimed material around the high-efficiency crucible, then stack the crystal brick recycled material, head and tail recycled material or bar material inside the edge skin recycled material, and fill the crystal brick recycled material, head and tail recycled material with blocks or scraps In the space formed by recycled materials or rods, go up one by one until the crucible is full.

[004...

Embodiment 2

[0043] Screen the single crystal fragments with a length of 5-10mm, pickle, rinse until there is no acid residue, and dry to obtain the bottom layer a; sort the silicon material with a thickness of 3-5cm and a size of 156mm*156mm to obtain the bottom layer material b;

[0044] Sprinkle a layer of the above-mentioned primer a evenly on the bottom of the high-efficiency crucible until the bottom coating of the high-efficiency crucible cannot be seen visually, then spread the above-mentioned primer b on top of the primer a, leaving no gap between the silicon materials of the primer b ;

[0045] Spread the edge skin reclaimed material around the high-efficiency crucible, then stack the crystal brick recycled material, head and tail recycled material or bar material inside the edge skin recycled material, and fill the crystal brick recycled material, head and tail recycled material with blocks or scraps In the space formed by recycled materials or rods, go up one by one until the ...

Embodiment 3

[0049] Screen the primary polycrystalline fragments with a length of 5-10mm, rinse them after pickling until no acid remains, and dry them. The acid volume ratio during pickling is hydrofluoric acid: nitric acid: water is 1:12:13, and the obtained Base material a; sort silicon material with a thickness of 3 to 5 cm and a size of 156mm*156mm to obtain base material b;

[0050] Sprinkle a layer of the above-mentioned primer a evenly on the bottom of the high-efficiency crucible until the bottom coating of the high-efficiency crucible cannot be seen visually, then spread the above-mentioned primer b on top of the primer a, leaving no gap between the silicon materials of the primer b ;

[0051] Spread the edge skin reclaimed material around the high-efficiency crucible, then stack the crystal brick recycled material, head and tail recycled material or bar material inside the edge skin recycled material, and fill the crystal brick recycled material, head and tail recycled material ...

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Abstract

The invention provides a loading method of a high-efficiency crucible for producing polycrystalline silicone. The loading method comprises the following steps: (A) selecting a broken silicon material in the size of 3mm to 12mm, pickling the broken silicon material, then rinsing the broken silicon material until no acid remains, drying the silicon material, and packing the silicon material in a splitting manner to obtain a grate-layer material a; selecting a recycled material with the thickness of 3cm to 5cm and the size of 156mm*156mm, placing every five blocks into one package to obtain a grate-layer material b; (B) spraying a layer of grate-layer material a and a grate-layer material b on the bottom of the high-efficiency crucible; (C) laying the leftover recycled material on the periphery of the high-efficiency crucible, stacking a crystal-tile-shaped silicon material and a rod-shaped silicon material at the inner side of the leftover recycled material, and filling a space formed by the crystal-tile recycled material with the blocked silicon material and other smaller silicon materials, and sequentially laying the materials from bottom to top until the loading is ended. The crucible is loaded by utilizing the method, in the ingot casting process, the cold-shock chilling nucleation is not needed, and the high-quality polycrystalline silicon ingots which are uniform and consistent in small grains can be easily obtained.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon solar cells, in particular to a method for charging a high-efficiency crucible for producing polycrystalline silicon. Background technique [0002] In recent years, with the depletion of non-renewable energy sources, solar cells have been developed rapidly. Since the preparation process of cast polysilicon is relatively simple and the cost is much lower than that of monocrystalline silicon, polysilicon has gradually replaced Czochralski monocrystalline silicon in the solar cell material market and has become the most important photovoltaic material in the industry. However, compared with Czochralski monocrystalline silicon, various defects in cast polycrystalline silicon, such as grain boundaries, dislocations, micro-defects, and impurity carbon and oxygen in the material, make the conversion efficiency of polycrystalline silicon cells lower than that of Czochralski monocrystalline...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 常传波杨振帮袁聪冯琰
Owner YANGZHOU RONGDE NEW ENERGY TECH
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