Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A catastrophic relaxation buffer for high in-composition InGAAs detectors

A buffer layer and detector technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unfavorable epitaxial growth of high-quality materials, and achieve the effects of improving diversity, good versatility, and reducing constraints

Inactive Publication Date: 2016-08-17
弦海(上海)量子科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large mismatch between InAs and GaAs (+6.7%), compared with substrates such as InP and InAs, high In composition In x Ga 1-x As(0.53

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A catastrophic relaxation buffer for high in-composition InGAAs detectors
  • A catastrophic relaxation buffer for high in-composition InGAAs detectors
  • A catastrophic relaxation buffer for high in-composition InGAAs detectors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Suitable for In on GaAs substrate 0.8 Ga 0.2 Abrupt Relaxation Backgrading Buffers for As Detectors

[0022] (1) GaAs single crystal material with [100] crystal orientation is used as the substrate, and InAs with a thickness of about 0.5 μm is first grown on the substrate as a sudden relaxation layer by conventional molecular beam epitaxy method to obtain a relatively flat surface;

[0023] (2) Re-grow a gradient buffer layer with reverse graded In composition, respectively: In with a thickness of 0.4 μm 0.9 Al 0.1 As layer, In with a thickness of 0.4 μm 0.85 Al 0.15 As layer, In with a thickness of 0.4 μm 0.8 Al 0.2 As layer, which is the required suitable In 0.8 Ga 0.2 Abrupt-relaxation reverse-graded buffer layer structure for As detectors.

Embodiment 2

[0025] InP substrate suitable for In 0.8 Ga 0.2 Abrupt Relaxation Backgrading Buffers for As Detectors

[0026] (1) Using the InP single crystal material with [100] crystal orientation as the substrate, and using the conventional molecular beam epitaxy method to first grow InAs with a thickness of about 1 μm on the substrate as a sudden relaxation layer to obtain a relatively flat surface;

[0027] (2) Then grow In with a thickness of 0.1 μm 0.95 Al 0.05 AS layer;

[0028] (3) Re-grow In with a thickness of 2 μm and reverse continuous gradient of In composition x Al 1-x As buffer layer, where x is reversely graded from 0.95 to 0.8, and its mismatch rate is about 0.67% / μm, this structure is suitable for InP substrate 0.8 Ga 0.2 Abrupt-relaxation reverse-graded buffer layer structure for As detectors.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a mutation relaxation buffer layer for an InGaAs probe with a high In component. An InAs mutation relaxation layer extends on a semiconductor substrate; an arsenide variation structural material of which the In component extends on the InAs mutation relaxation layer and gradually changes in a reversed direction is used as a buffer layer. According to a research method of the InGaAs infrared probe which is arranged on an expandable semiconductor substrate and is provided with the wavelength of more than 1.7 microns, the arsenide variation buffer layer structure of which the In component gradually changes in the reversed direction is adopted, the strain in a larger mismatch InGaAs material can be better released in an expected manner, so that the defect density in an InGaAs absorption layer is reduced, and the device performance is improved; the greater freedom degree is led into a structural designing method of the InGaAs infrared probe with the wavelength of more than 1.7 microns, and the mutation relaxation buffer layer has wide application prospect.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials and devices, in particular to a sudden relaxation buffer layer used for high In composition InGaAs detectors. Background technique [0002] Since the InGaAs material is a direct bandgap material with all components, by adjusting the In composition, it can cover the 0.8-3.5 μm band. In addition, InGaAs detectors have the advantages of high sensitivity, fast response, good radiation resistance, and room temperature operation, so InGaAs is an ideal material for short-wave infrared detectors. For example, In with a cut-off wavelength of 1.7 μm at room temperature 0.53 Ga 0.47 As detectors have been widely used in the field of optical communication, and the materials are mainly grown on matching InP substrates. However, as the In composition continues to increase, the mismatch between InGaAs materials and InP substrates will become larger and larger. When the In composition is 8...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/101
CPCH01L31/0216H01L31/03046H01L31/101
Inventor 陈星佑顾溢张永刚奚苏萍
Owner 弦海(上海)量子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com